Keyphrases
Cadmium Telluride
100%
Porous Silicon
68%
Metal-organic Chemical Vapor Deposition (MOCVD)
65%
SOI CMOS
60%
Transistor
59%
Uncooled
56%
Micromachining
55%
Hg1-xCdxTe
55%
HgCdTe
50%
Photodiode
44%
P-type
43%
Thermal Sensor
41%
Electrostatic Actuator
38%
Epilayer
37%
Single Photon Avalanche Diode
35%
Complementary Metal Oxide Semiconductor
31%
CMOS Transistor
31%
Sensor-based
31%
CMOS Technology
31%
Semiconductors
29%
ISFET
27%
Photoluminescence
26%
Spectrometer
24%
Pull-in Parameters
24%
Silicon-on-insulator
23%
Standard CMOS Technology
23%
Subthreshold
23%
CMOS-MEMS
23%
Porous Silicon Layer
22%
Optical Sensing
22%
Bulk Micromachining
21%
Microcantilever
21%
SOI Wafer
20%
Noise Measurement
20%
Passivation
19%
High Performance
19%
Electrical Properties
19%
Interface Charge
18%
Diode
18%
HgCdTe Photodiodes
18%
Gas Sensor
17%
Excess Carrier Lifetime
17%
InSb
17%
Native Oxide
17%
Mobility-lifetime Product
17%
Actuator
17%
Muzzle Flash Detection
16%
CdZnTe Spectrometer
16%
Micro-electro-mechanical Systems
16%
MOS Transistor
16%
Engineering
Microelectromechanical System
87%
Electrostatic Force
55%
Photodiode
53%
Thermal Sensor
50%
Porous Silicon
47%
Micro Machining
37%
Image Sensor
33%
Complementary Metal-Oxide-Semiconductor
27%
Passivation
26%
Measurement Noise
25%
Vapor Deposition
25%
Chemical Vapor Deposition
25%
Ion Sensitive Field Effect Transistor
24%
Gas Sensor
24%
Microcantilevers
24%
Silicon on Insulator
22%
Gamma Ray
22%
Tunnel Construction
21%
Polysilicon
19%
Focal Plane
19%
Collection Efficiency
18%
Two Dimensional
18%
Dielectrics
18%
Energy Engineering
18%
Thermoelectricity
17%
Resonant Frequency
16%
Sensing System
15%
Optimal Design
15%
Antenna
14%
Proof Mass
14%
Experimental Result
14%
Gas-Phase
14%
Current-Voltage Characteristic
14%
Frequency Noise
14%
Resistive
14%
Bias Voltage
14%
Floating Gate
14%
Carrier Lifetime
13%
Reverse Bias
12%
Heterojunctions
12%
Microsystem
12%
Metal-Oxide-Semiconductor Field-Effect Transistor
12%
Electric Field
12%
Sensing Element
12%
Substrate Material
12%
Low-Temperature
12%
Internet-Of-Things
12%
Analog Circuit
11%
Integration Time
11%
Micromirrors
11%