A novel (SALA) system for crystallization and doping in low-temperature poly-Si thin-film transistors

R. Ishihara; A. Glazed; Y. Raab; P. Rusian; M. Dorfan; B. Lavi; I. Leizerson; A. Kishinevsky; Y. Van Aandel; X. Cao; J. W. Metselaar; C. I.M. Beanakker; S. Stolyarova; Y. Nemirovsky

A novel (SALA) system for crystallization and doping in low-temperature poly-Si thin-film transistors

R. Ishihara, A. Glazed, Y. Raab, P. Rusian, M. Dorfan, B. Lavi, I. Leizerson, A. Kishinevsky, Y. Van Aandel, X. Cao, J. W. Metselaar, C. I.M. Beanakker, S. Stolyarova, Y. Nemirovsky

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

CMOS poly-Si TFTs were fabricated through crystallization and GILD processes by a novel selected area laser assisted (SALA) system. The system enables a local area irradiation of small beams of a pulsed solid-state laser of frequency tripled Nd:YAG. The novel TFT process eliminated 3 doping mask steps of the conventional process. On-off current ratios for both types of poly-Si TFTs were improved by SALA. The field effect mobility of n- and p-channel TFTs is 84 cm2/Vs and 75 cm2/Vs, respectively.

Original language	English
Title of host publication	IDW/AD'05 - 12th International Display Workshops in Conjunction with Asia Display 2005
Pages	961-964
Number of pages	4
State	Published - 2005
Event	IDW/AD'05 - 12th International Display Workshops in Conjunction with Asia Display 2005 - Takamatsu, Japan Duration: 6 Dec 2005 → 9 Dec 2005

Conference

Conference	IDW/AD'05 - 12th International Display Workshops in Conjunction with Asia Display 2005
Country/Territory	Japan
City	Takamatsu
Period	6/12/05 → 9/12/05

ASJC Scopus subject areas

General Engineering

Cite this

Ishihara, R., Glazed, A., Raab, Y., Rusian, P., Dorfan, M., Lavi, B., Leizerson, I., Kishinevsky, A., Van Aandel, Y., Cao, X., Metselaar, J. W., Beanakker, C. I. M., Stolyarova, S., & Nemirovsky, Y. (2005). A novel (SALA) system for crystallization and doping in low-temperature poly-Si thin-film transistors. In IDW/AD'05 - 12th International Display Workshops in Conjunction with Asia Display 2005 (pp. 961-964)

@inproceedings{92f09520687c49408b64ee4bca4f79a2,

title = "A novel (SALA) system for crystallization and doping in low-temperature poly-Si thin-film transistors",

abstract = "CMOS poly-Si TFTs were fabricated through crystallization and GILD processes by a novel selected area laser assisted (SALA) system. The system enables a local area irradiation of small beams of a pulsed solid-state laser of frequency tripled Nd:YAG. The novel TFT process eliminated 3 doping mask steps of the conventional process. On-off current ratios for both types of poly-Si TFTs were improved by SALA. The field effect mobility of n- and p-channel TFTs is 84 cm2/Vs and 75 cm2/Vs, respectively.",

author = "R. Ishihara and A. Glazed and Y. Raab and P. Rusian and M. Dorfan and B. Lavi and I. Leizerson and A. Kishinevsky and {Van Aandel}, Y. and X. Cao and Metselaar, {J. W.} and Beanakker, {C. I.M.} and S. Stolyarova and Y. Nemirovsky",

year = "2005",

language = "אנגלית",

pages = "961--964",

booktitle = "IDW/AD'05 - 12th International Display Workshops in Conjunction with Asia Display 2005",

note = "IDW/AD'05 - 12th International Display Workshops in Conjunction with Asia Display 2005 ; Conference date: 06-12-2005 Through 09-12-2005",

}

Ishihara, R, Glazed, A, Raab, Y, Rusian, P, Dorfan, M, Lavi, B, Leizerson, I, Kishinevsky, A, Van Aandel, Y, Cao, X, Metselaar, JW, Beanakker, CIM, Stolyarova, S & Nemirovsky, Y 2005, A novel (SALA) system for crystallization and doping in low-temperature poly-Si thin-film transistors. in IDW/AD'05 - 12th International Display Workshops in Conjunction with Asia Display 2005. pp. 961-964, IDW/AD'05 - 12th International Display Workshops in Conjunction with Asia Display 2005, Takamatsu, Japan, 6/12/05.

TY - GEN

T1 - A novel (SALA) system for crystallization and doping in low-temperature poly-Si thin-film transistors

AU - Ishihara, R.

AU - Glazed, A.

AU - Raab, Y.

AU - Rusian, P.

AU - Dorfan, M.

AU - Lavi, B.

AU - Leizerson, I.

AU - Kishinevsky, A.

AU - Van Aandel, Y.

AU - Cao, X.

AU - Metselaar, J. W.

AU - Beanakker, C. I.M.

AU - Stolyarova, S.

AU - Nemirovsky, Y.

PY - 2005

Y1 - 2005

N2 - CMOS poly-Si TFTs were fabricated through crystallization and GILD processes by a novel selected area laser assisted (SALA) system. The system enables a local area irradiation of small beams of a pulsed solid-state laser of frequency tripled Nd:YAG. The novel TFT process eliminated 3 doping mask steps of the conventional process. On-off current ratios for both types of poly-Si TFTs were improved by SALA. The field effect mobility of n- and p-channel TFTs is 84 cm2/Vs and 75 cm2/Vs, respectively.

AB - CMOS poly-Si TFTs were fabricated through crystallization and GILD processes by a novel selected area laser assisted (SALA) system. The system enables a local area irradiation of small beams of a pulsed solid-state laser of frequency tripled Nd:YAG. The novel TFT process eliminated 3 doping mask steps of the conventional process. On-off current ratios for both types of poly-Si TFTs were improved by SALA. The field effect mobility of n- and p-channel TFTs is 84 cm2/Vs and 75 cm2/Vs, respectively.

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UR - https://www.idw.or.jp/IDW05FP.pdf

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AN - SCOPUS:33644588641

SP - 961

EP - 964

BT - IDW/AD'05 - 12th International Display Workshops in Conjunction with Asia Display 2005

T2 - IDW/AD'05 - 12th International Display Workshops in Conjunction with Asia Display 2005

Y2 - 6 December 2005 through 9 December 2005

ER -

A novel (SALA) system for crystallization and doping in low-temperature poly-Si thin-film transistors

Abstract

Conference

ASJC Scopus subject areas

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