Abstract
A monolithic resistorless circuit has been designed for active reset of the N+P single-ended (common anode) single-photon avalanche diode (SPAD). This type of SPAD has enhanced the photon detection efficiency in the near-infrared (NIR) region relatively to the P+N (two-ended) SPAD. Due to this fact, the N+P SPAD is a better candidate for the light detection and range (LiDAR) working in the NIR region. The circuit is fabricated in a standard 0.18-μm CMOS image sensor process. The dead time after each photon detection is adjustable; the minimum measured value is 4 ns. The maximum photon count rate corresponding to this dead time is 2.5 c. 108 photons/s. This circuit guarantees precise repeatable response, short and well-controlled dead time, and after-pulsing effect reduction. All these are essential for many SPAD applications and crucial for increasing the saturation level of the silicon photo multiplier (SiPM)-based LiDAR systems working in strong background light conditions on sunny day.
Original language | English |
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Article number | 8891769 |
Pages (from-to) | 5191-5195 |
Number of pages | 5 |
Journal | IEEE Transactions on Electron Devices |
Volume | 66 |
Issue number | 12 |
DOIs | |
State | Published - Dec 2019 |
Keywords
- 2-D imager
- CMOS single-photon avalanche diode (SPAD)
- active quenching
- light detection and range (LiDAR)
- photon counting
- photon timing
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering