Capacitance-voltage characteristics of floating gate electrolyte-insulator-semiconductor capacitors

G. C. Jakobson, L. Sudakov-Boreysha, M. Feinsod, U. Dinar, Y. Nemirovsky

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper presents Capacitance-Voltage characteristics of Floating Gate Electrolyte Insulator Semiconductor capacitors with two different sensing layers: PECVD silicon nitride and evaporated aluminum oxide. The devices are studied at pH=7 at 1KHz. High frequency characteristics are observed. The basic MOS structure is separately measured and analyzed providing the sample basic parameters. The results show good consistency regarding layer thickness and substrate characteristics. A large hysteresis of -1.1V at flat-band capacitance is observed in the case of the silicon nitride layer. A smaller hysteresis of -0.15V is measured for the aluminum oxide layer. In both cases the hysteresis measured presents counter-clockwise direction, indicating that positive mobile charges leaking from the solution to the floating gate are responsible for the hysteresis. We believe that the mismatch in the thermal coefficient of expansion between aluminum (25 ppm) and Si3N4 (-0.3 ppm) results in microcracks and thus enhanced the leakage and hysteresis. Hence, the A1203/Al dielectric is a much better choice towards CMOS compatible ISFETs.

Original languageEnglish
Title of host publication21st IEEE Convention of the Electrical and Electronic Engineers in Israel, Proceedings
Pages61-64
Number of pages4
ISBN (Electronic)0780358422, 9780780358423
DOIs
StatePublished - 2000
Event21st IEEE Convention of the Electrical and Electronic Engineers in Israel, IEEEI 2000 - Tel-Aviv, Israel
Duration: 11 Apr 200012 Apr 2000

Publication series

Name21st IEEE Convention of the Electrical and Electronic Engineers in Israel, Proceedings

Conference

Conference21st IEEE Convention of the Electrical and Electronic Engineers in Israel, IEEEI 2000
Country/TerritoryIsrael
CityTel-Aviv
Period11/04/0012/04/00

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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