TY - GEN
T1 - Capacitance-voltage characteristics of floating gate electrolyte-insulator-semiconductor capacitors
AU - Jakobson, G. C.
AU - Sudakov-Boreysha, L.
AU - Feinsod, M.
AU - Dinar, U.
AU - Nemirovsky, Y.
N1 - Publisher Copyright:
©2000 IEEE.
PY - 2000
Y1 - 2000
N2 - This paper presents Capacitance-Voltage characteristics of Floating Gate Electrolyte Insulator Semiconductor capacitors with two different sensing layers: PECVD silicon nitride and evaporated aluminum oxide. The devices are studied at pH=7 at 1KHz. High frequency characteristics are observed. The basic MOS structure is separately measured and analyzed providing the sample basic parameters. The results show good consistency regarding layer thickness and substrate characteristics. A large hysteresis of -1.1V at flat-band capacitance is observed in the case of the silicon nitride layer. A smaller hysteresis of -0.15V is measured for the aluminum oxide layer. In both cases the hysteresis measured presents counter-clockwise direction, indicating that positive mobile charges leaking from the solution to the floating gate are responsible for the hysteresis. We believe that the mismatch in the thermal coefficient of expansion between aluminum (25 ppm) and Si3N4 (-0.3 ppm) results in microcracks and thus enhanced the leakage and hysteresis. Hence, the A1203/Al dielectric is a much better choice towards CMOS compatible ISFETs.
AB - This paper presents Capacitance-Voltage characteristics of Floating Gate Electrolyte Insulator Semiconductor capacitors with two different sensing layers: PECVD silicon nitride and evaporated aluminum oxide. The devices are studied at pH=7 at 1KHz. High frequency characteristics are observed. The basic MOS structure is separately measured and analyzed providing the sample basic parameters. The results show good consistency regarding layer thickness and substrate characteristics. A large hysteresis of -1.1V at flat-band capacitance is observed in the case of the silicon nitride layer. A smaller hysteresis of -0.15V is measured for the aluminum oxide layer. In both cases the hysteresis measured presents counter-clockwise direction, indicating that positive mobile charges leaking from the solution to the floating gate are responsible for the hysteresis. We believe that the mismatch in the thermal coefficient of expansion between aluminum (25 ppm) and Si3N4 (-0.3 ppm) results in microcracks and thus enhanced the leakage and hysteresis. Hence, the A1203/Al dielectric is a much better choice towards CMOS compatible ISFETs.
UR - http://www.scopus.com/inward/record.url?scp=84953405537&partnerID=8YFLogxK
U2 - 10.1109/EEEI.2000.924320
DO - 10.1109/EEEI.2000.924320
M3 - ???researchoutput.researchoutputtypes.contributiontobookanthology.conference???
AN - SCOPUS:84953405537
T3 - 21st IEEE Convention of the Electrical and Electronic Engineers in Israel, Proceedings
SP - 61
EP - 64
BT - 21st IEEE Convention of the Electrical and Electronic Engineers in Israel, Proceedings
T2 - 21st IEEE Convention of the Electrical and Electronic Engineers in Israel, IEEEI 2000
Y2 - 11 April 2000 through 12 April 2000
ER -