Characterization and Architecture of Monolithic NP-CMOS-SiPM Array for ToF Measurements

A. Eshkoli, Y. Nemirovsky

Research output: Contribution to journalArticlepeer-review

Abstract

This article focuses on the characterization and architecture of a new mixed design approach to monolithic CMOS-silicon-photomultiplier (SiPM), where the mixed-signal circuitry as well as the logical concepts are implemented at the die level. The new architecture contains two key areas: 1) a method for sampling, filtering, and converting the electrical signal generated by the SiPM to the digital domain by taking advantage of the nature of the SiPM as an 'optical-to-digital converter' and 2) a fully digital configurable method, which requires just one clock generator, enabling sampling at an adjustable time window (gating method) and reduces background noise. We report the design, simulation, and measurement results. The system was fabricated at a low-cost 0.18∼\mathrm {[{\mu {\mathrm{ m}}}]}0.18 - \mu \text{m} CMOS process yet achieves a clock rate of 1 GHz, high timing and photon counting resolution, and low jitter. The reported demonstrator may be applied to 3-D range measurements, light detection and ranging (LIDAR), time-of-flight (ToF) system, and gaming systems.

Original languageEnglish
Article number9296269
JournalIEEE Transactions on Instrumentation and Measurement
Volume70
DOIs
StatePublished - 2021

Keywords

  • Architecture
  • CMOS
  • dark count rate (DCR)
  • light detection and ranging (LIDAR) system
  • read-out circuitry
  • silicon photomultiplier (SiPM)
  • single photon avalanche diode (SPAD)

ASJC Scopus subject areas

  • Instrumentation
  • Electrical and Electronic Engineering

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