CMOS-SOI-MEMS transistor (TeraMOS) for Terahertz Imaging

D. Corcos; D. Goren; Y. Nemirovsky

doi:10.1109/COMCAS.2009.5386033

CMOS-SOI-MEMS transistor (TeraMOS) for Terahertz Imaging

D. Corcos, D. Goren, Y. Nemirovsky

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

This study presents a new sensor for Terahertz Imaging, dubbed here as TeraMOS, which is based on several leading technologies: CMOS-SOI (Silicon on Insulator), MEMS (Micro Electro Mechanical Systems) and Terahertz Photonics. The paper focuses on the electrical characterization of CMOS-SOI "virgin" (unreleased) transistors fabricated in the IBM 0.18μm RF CMOS-SOI advanced process. By applying MEMS post processing to thermally isolate the transistors, the resulting CMOS-SOI-MEMS transistors become highly sensitive active bolometers - the TeraMOS sensors. The measured Temperature Coefficient of Current (TCC) as a function of temperature, gate voltage and drain current is presented. A new suggested figure of merit for the TeraMOS sensors is defined by TCC²·I and measured values of it are presented.

Original language	English
Title of host publication	2009 IEEE International Conference on Microwaves, Communications, Antennas and Electronics Systems, COMCAS 2009
DOIs	https://doi.org/10.1109/COMCAS.2009.5386033
State	Published - 2009
Event	2009 IEEE International Conference on Microwaves, Communications, Antennas and Electronics Systems, COMCAS 2009 - Tel Aviv, Israel Duration: 9 Nov 2009 → 11 Nov 2009

Publication series

Name	2009 IEEE International Conference on Microwaves, Communications, Antennas and Electronics Systems, COMCAS 2009

Conference

Conference	2009 IEEE International Conference on Microwaves, Communications, Antennas and Electronics Systems, COMCAS 2009
Country/Territory	Israel
City	Tel Aviv
Period	9/11/09 → 11/11/09

Keywords

CMOS
MOS transistors
Silicon-on-Insulator (SOI)
Temperature Coefficient of Current (TCC)
Terahertz sensors

ASJC Scopus subject areas

Computational Theory and Mathematics
Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/COMCAS.2009.5386033

Cite this

Corcos, D., Goren, D., & Nemirovsky, Y. (2009). CMOS-SOI-MEMS transistor (TeraMOS) for Terahertz Imaging. In 2009 IEEE International Conference on Microwaves, Communications, Antennas and Electronics Systems, COMCAS 2009 Article 5386033 (2009 IEEE International Conference on Microwaves, Communications, Antennas and Electronics Systems, COMCAS 2009). https://doi.org/10.1109/COMCAS.2009.5386033

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abstract = "This study presents a new sensor for Terahertz Imaging, dubbed here as TeraMOS, which is based on several leading technologies: CMOS-SOI (Silicon on Insulator), MEMS (Micro Electro Mechanical Systems) and Terahertz Photonics. The paper focuses on the electrical characterization of CMOS-SOI {"}virgin{"} (unreleased) transistors fabricated in the IBM 0.18μm RF CMOS-SOI advanced process. By applying MEMS post processing to thermally isolate the transistors, the resulting CMOS-SOI-MEMS transistors become highly sensitive active bolometers - the TeraMOS sensors. The measured Temperature Coefficient of Current (TCC) as a function of temperature, gate voltage and drain current is presented. A new suggested figure of merit for the TeraMOS sensors is defined by TCC2·I and measured values of it are presented.",

keywords = "CMOS, MOS transistors, Silicon-on-Insulator (SOI), Temperature Coefficient of Current (TCC), Terahertz sensors",

author = "D. Corcos and D. Goren and Y. Nemirovsky",

year = "2009",

doi = "10.1109/COMCAS.2009.5386033",

language = "אנגלית",

isbn = "9781424439850",

series = "2009 IEEE International Conference on Microwaves, Communications, Antennas and Electronics Systems, COMCAS 2009",

booktitle = "2009 IEEE International Conference on Microwaves, Communications, Antennas and Electronics Systems, COMCAS 2009",

note = "2009 IEEE International Conference on Microwaves, Communications, Antennas and Electronics Systems, COMCAS 2009 ; Conference date: 09-11-2009 Through 11-11-2009",

}

Corcos, D, Goren, D & Nemirovsky, Y 2009, CMOS-SOI-MEMS transistor (TeraMOS) for Terahertz Imaging. in 2009 IEEE International Conference on Microwaves, Communications, Antennas and Electronics Systems, COMCAS 2009., 5386033, 2009 IEEE International Conference on Microwaves, Communications, Antennas and Electronics Systems, COMCAS 2009, 2009 IEEE International Conference on Microwaves, Communications, Antennas and Electronics Systems, COMCAS 2009, Tel Aviv, Israel, 9/11/09. https://doi.org/10.1109/COMCAS.2009.5386033

CMOS-SOI-MEMS transistor (TeraMOS) for Terahertz Imaging. / Corcos, D.; Goren, D.; Nemirovsky, Y.
2009 IEEE International Conference on Microwaves, Communications, Antennas and Electronics Systems, COMCAS 2009. 2009. 5386033 (2009 IEEE International Conference on Microwaves, Communications, Antennas and Electronics Systems, COMCAS 2009).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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CMOS-SOI-MEMS transistor (TeraMOS) for Terahertz Imaging

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Keywords

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