CMOS-SOI-NEMS uncooled infrared presence sensor

Alex Zviagintsev; Tanya Blank; Sharon Bar-Lev; Igor Brouk; Ilan Bloom; Yael Nemirovsky

doi:10.1109/ICSEE.2016.7806034

CMOS-SOI-NEMS uncooled infrared presence sensor

Alex Zviagintsev, Tanya Blank, Sharon Bar-Lev, Igor Brouk, Ilan Bloom, Yael Nemirovsky

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Previous reports of various IEEE conferences have described a new generation of uncooled passive infrared (PIR) security sensors based on a suspended transistor (TMOS) fabricated in standard CMOS-SOI process and released by post-etching. The patented technology is now under development for commercial applications. This study focuses on the design and performance of a small sensing array, known as a presence sensor, which is required for the detection of people in smart homes and has a wide range of applications in smart homes. The spatial resolution of this technology demonstrator is limited because of the relatively small number of pixels, but the thermal performance is excellent, with pixel NETD of ∼20mK. For the complete system with readout the evaluated NETD is ∼35mK. Based on standard technology and outstanding performance of high sensitivity and ultralow power consumptions, this presence sensor has a huge potential for commercial applications.

Original language	English
Title of host publication	2016 IEEE International Conference on the Science of Electrical Engineering, ICSEE 2016
ISBN (Electronic)	9781509021529
DOIs	https://doi.org/10.1109/ICSEE.2016.7806034
State	Published - 4 Jan 2017
Event	2016 IEEE International Conference on the Science of Electrical Engineering, ICSEE 2016 - Eilat, Israel Duration: 16 Nov 2016 → 18 Nov 2016

Publication series

Name	2016 IEEE International Conference on the Science of Electrical Engineering, ICSEE 2016

Conference

Conference	2016 IEEE International Conference on the Science of Electrical Engineering, ICSEE 2016
Country/Territory	Israel
City	Eilat
Period	16/11/16 → 18/11/16

Keywords

CMOS-SOI
Infrared detectors
Integrated circuits
Nano Electrical Mechanical Systems (NEMS)
Semiconductor devices
Sensor arrays
Thermal sensors

ASJC Scopus subject areas

Computer Science Applications
Hardware and Architecture
Artificial Intelligence
Computer Networks and Communications
Electrical and Electronic Engineering

Access to Document

10.1109/ICSEE.2016.7806034

Cite this

Zviagintsev, A., Blank, T., Bar-Lev, S., Brouk, I., Bloom, I., & Nemirovsky, Y. (2017). CMOS-SOI-NEMS uncooled infrared presence sensor. In 2016 IEEE International Conference on the Science of Electrical Engineering, ICSEE 2016 Article 7806034 (2016 IEEE International Conference on the Science of Electrical Engineering, ICSEE 2016). https://doi.org/10.1109/ICSEE.2016.7806034

@inproceedings{8d0d51c87f754e37ab2bff099b4e1a03,

title = "CMOS-SOI-NEMS uncooled infrared presence sensor",

abstract = "Previous reports of various IEEE conferences have described a new generation of uncooled passive infrared (PIR) security sensors based on a suspended transistor (TMOS) fabricated in standard CMOS-SOI process and released by post-etching. The patented technology is now under development for commercial applications. This study focuses on the design and performance of a small sensing array, known as a presence sensor, which is required for the detection of people in smart homes and has a wide range of applications in smart homes. The spatial resolution of this technology demonstrator is limited because of the relatively small number of pixels, but the thermal performance is excellent, with pixel NETD of ∼20mK. For the complete system with readout the evaluated NETD is ∼35mK. Based on standard technology and outstanding performance of high sensitivity and ultralow power consumptions, this presence sensor has a huge potential for commercial applications.",

keywords = "CMOS-SOI, Infrared detectors, Integrated circuits, Nano Electrical Mechanical Systems (NEMS), Semiconductor devices, Sensor arrays, Thermal sensors",

author = "Alex Zviagintsev and Tanya Blank and Sharon Bar-Lev and Igor Brouk and Ilan Bloom and Yael Nemirovsky",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 2016 IEEE International Conference on the Science of Electrical Engineering, ICSEE 2016 ; Conference date: 16-11-2016 Through 18-11-2016",

year = "2017",

month = jan,

day = "4",

doi = "10.1109/ICSEE.2016.7806034",

language = "אנגלית",

series = "2016 IEEE International Conference on the Science of Electrical Engineering, ICSEE 2016",

booktitle = "2016 IEEE International Conference on the Science of Electrical Engineering, ICSEE 2016",

}

Zviagintsev, A, Blank, T, Bar-Lev, S, Brouk, I, Bloom, I & Nemirovsky, Y 2017, CMOS-SOI-NEMS uncooled infrared presence sensor. in 2016 IEEE International Conference on the Science of Electrical Engineering, ICSEE 2016., 7806034, 2016 IEEE International Conference on the Science of Electrical Engineering, ICSEE 2016, 2016 IEEE International Conference on the Science of Electrical Engineering, ICSEE 2016, Eilat, Israel, 16/11/16. https://doi.org/10.1109/ICSEE.2016.7806034

CMOS-SOI-NEMS uncooled infrared presence sensor. / Zviagintsev, Alex; Blank, Tanya; Bar-Lev, Sharon et al.
2016 IEEE International Conference on the Science of Electrical Engineering, ICSEE 2016. 2017. 7806034 (2016 IEEE International Conference on the Science of Electrical Engineering, ICSEE 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - CMOS-SOI-NEMS uncooled infrared presence sensor

AU - Zviagintsev, Alex

AU - Blank, Tanya

AU - Bar-Lev, Sharon

AU - Brouk, Igor

AU - Bloom, Ilan

AU - Nemirovsky, Yael

PY - 2017/1/4

Y1 - 2017/1/4

N2 - Previous reports of various IEEE conferences have described a new generation of uncooled passive infrared (PIR) security sensors based on a suspended transistor (TMOS) fabricated in standard CMOS-SOI process and released by post-etching. The patented technology is now under development for commercial applications. This study focuses on the design and performance of a small sensing array, known as a presence sensor, which is required for the detection of people in smart homes and has a wide range of applications in smart homes. The spatial resolution of this technology demonstrator is limited because of the relatively small number of pixels, but the thermal performance is excellent, with pixel NETD of ∼20mK. For the complete system with readout the evaluated NETD is ∼35mK. Based on standard technology and outstanding performance of high sensitivity and ultralow power consumptions, this presence sensor has a huge potential for commercial applications.

AB - Previous reports of various IEEE conferences have described a new generation of uncooled passive infrared (PIR) security sensors based on a suspended transistor (TMOS) fabricated in standard CMOS-SOI process and released by post-etching. The patented technology is now under development for commercial applications. This study focuses on the design and performance of a small sensing array, known as a presence sensor, which is required for the detection of people in smart homes and has a wide range of applications in smart homes. The spatial resolution of this technology demonstrator is limited because of the relatively small number of pixels, but the thermal performance is excellent, with pixel NETD of ∼20mK. For the complete system with readout the evaluated NETD is ∼35mK. Based on standard technology and outstanding performance of high sensitivity and ultralow power consumptions, this presence sensor has a huge potential for commercial applications.

KW - CMOS-SOI

KW - Infrared detectors

KW - Integrated circuits

KW - Nano Electrical Mechanical Systems (NEMS)

KW - Semiconductor devices

KW - Sensor arrays

KW - Thermal sensors

UR - http://www.scopus.com/inward/record.url?scp=85014172758&partnerID=8YFLogxK

U2 - 10.1109/ICSEE.2016.7806034

DO - 10.1109/ICSEE.2016.7806034

M3 - ???researchoutput.researchoutputtypes.contributiontobookanthology.conference???

AN - SCOPUS:85014172758

T3 - 2016 IEEE International Conference on the Science of Electrical Engineering, ICSEE 2016

BT - 2016 IEEE International Conference on the Science of Electrical Engineering, ICSEE 2016

T2 - 2016 IEEE International Conference on the Science of Electrical Engineering, ICSEE 2016

Y2 - 16 November 2016 through 18 November 2016

ER -

CMOS-SOI-NEMS uncooled infrared presence sensor

Abstract

Publication series

Conference

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this