TY - GEN
T1 - Comprehensive comparison of integrated temperature sensors in CMOS-SOI technology
AU - Malits, Maria
AU - Nemirovsky, Yael
N1 - Publisher Copyright:
© 2015 IEEE.
PY - 2015/12/17
Y1 - 2015/12/17
N2 - This paper reviews the two most commonly used integrated temperature sensors available in CMOS-SOI technology: lateral PN diode and a standard MOSFET transistor. Both CMOS-SOI transistors and lateral diodes were designed and fabricated with a standard partially depleted CMOS -SOI 180nm process of IBM. Experimental results indicated that both lateral diodes and MOSFETs can be used to implement temperature sensors with high accuracy in room temperature and above, after a suitable calibration. It is shown that despite the linear behavior of both sensors the lateral diode has higher sensitivity, but a narrower useful temperature range. In addition, it is shown that lateral diodes exhibit much higher low frequency noise than standard MOSFETs, which can influence performance if the device is used as thermal sensor. The results of this study have impact on circuit design and may assist in choosing the optimal integrated temperature sensor or thermal sensor for SOI technology.
AB - This paper reviews the two most commonly used integrated temperature sensors available in CMOS-SOI technology: lateral PN diode and a standard MOSFET transistor. Both CMOS-SOI transistors and lateral diodes were designed and fabricated with a standard partially depleted CMOS -SOI 180nm process of IBM. Experimental results indicated that both lateral diodes and MOSFETs can be used to implement temperature sensors with high accuracy in room temperature and above, after a suitable calibration. It is shown that despite the linear behavior of both sensors the lateral diode has higher sensitivity, but a narrower useful temperature range. In addition, it is shown that lateral diodes exhibit much higher low frequency noise than standard MOSFETs, which can influence performance if the device is used as thermal sensor. The results of this study have impact on circuit design and may assist in choosing the optimal integrated temperature sensor or thermal sensor for SOI technology.
KW - CMOS-SOI technology
KW - MOSFET
KW - integrated temperature sensors
KW - lateral diodes
UR - http://www.scopus.com/inward/record.url?scp=84962748767&partnerID=8YFLogxK
U2 - 10.1109/COMCAS.2015.7360443
DO - 10.1109/COMCAS.2015.7360443
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AN - SCOPUS:84962748767
T3 - 2015 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2015
BT - 2015 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2015
T2 - IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2015
Y2 - 2 November 2015 through 4 November 2015
ER -