TY - JOUR
T1 - Crystallization dynamics probed by transient resistance in phase change memory cells
AU - Ordan, Efrat
AU - Nir-Harwood, Rivka Galya
AU - Dahan, Mor M.
AU - Keller, Yair
AU - Yalon, Eilam
N1 - Publisher Copyright:
© 2024 Author(s).
PY - 2024/5/28
Y1 - 2024/5/28
N2 - Crystallization (set) time is a key bottleneck to achieve high-speed programming in phase change memory (PCM). Overcoming this limitation requires a deeper understanding of the solidification processes within nanoscale device configuration. This study explores crystallization dynamics in Ge2Sb2Te5 by measuring the transient resistance and power during the set process in confined PCM cells with nanosecond resolution. The transient resistance probes the phase, while the power can be used to evaluate temperature, thus uncovering details of the phase change dynamics. Our findings reveal a notable trend indicating that solidification from the melt results in faster crystallization compared with annealing the glassy state. Moreover, we observed notable differences in the solidification dynamics during set (crystallization) and reset (amorphization) pulses. Our nanosecond transient measurement methodology proves valuable in revealing crucial aspects of PCM crystallization dynamics, holding the potential to enable higher-speed programming.
AB - Crystallization (set) time is a key bottleneck to achieve high-speed programming in phase change memory (PCM). Overcoming this limitation requires a deeper understanding of the solidification processes within nanoscale device configuration. This study explores crystallization dynamics in Ge2Sb2Te5 by measuring the transient resistance and power during the set process in confined PCM cells with nanosecond resolution. The transient resistance probes the phase, while the power can be used to evaluate temperature, thus uncovering details of the phase change dynamics. Our findings reveal a notable trend indicating that solidification from the melt results in faster crystallization compared with annealing the glassy state. Moreover, we observed notable differences in the solidification dynamics during set (crystallization) and reset (amorphization) pulses. Our nanosecond transient measurement methodology proves valuable in revealing crucial aspects of PCM crystallization dynamics, holding the potential to enable higher-speed programming.
UR - http://www.scopus.com/inward/record.url?scp=85194150878&partnerID=8YFLogxK
U2 - 10.1063/5.0202152
DO - 10.1063/5.0202152
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AN - SCOPUS:85194150878
SN - 0021-8979
VL - 135
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 20
M1 - 205703
ER -