Crystallization dynamics probed by transient resistance in phase change memory cells

Efrat Ordan, Rivka Galya Nir-Harwood, Mor M. Dahan, Yair Keller, Eilam Yalon

Research output: Contribution to journalArticlepeer-review

Abstract

Crystallization (set) time is a key bottleneck to achieve high-speed programming in phase change memory (PCM). Overcoming this limitation requires a deeper understanding of the solidification processes within nanoscale device configuration. This study explores crystallization dynamics in Ge2Sb2Te5 by measuring the transient resistance and power during the set process in confined PCM cells with nanosecond resolution. The transient resistance probes the phase, while the power can be used to evaluate temperature, thus uncovering details of the phase change dynamics. Our findings reveal a notable trend indicating that solidification from the melt results in faster crystallization compared with annealing the glassy state. Moreover, we observed notable differences in the solidification dynamics during set (crystallization) and reset (amorphization) pulses. Our nanosecond transient measurement methodology proves valuable in revealing crucial aspects of PCM crystallization dynamics, holding the potential to enable higher-speed programming.

Original languageEnglish
Article number205703
JournalJournal of Applied Physics
Volume135
Issue number20
DOIs
StatePublished - 28 May 2024

ASJC Scopus subject areas

  • General Physics and Astronomy

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