Degradation study of single poly radiation sensors by monitoring charge trapping

Evgeny Pikhay; Yakov Roizin; Yael Nemirovsky

doi:10.1016/j.microrel.2015.12.032

Degradation study of single poly radiation sensors by monitoring charge trapping

Evgeny Pikhay, Yakov Roizin, Yael Nemirovsky

Research output: Contribution to journal › Article › peer-review

Abstract

Special test structures emulating the performance of C-sensor, a direct floating gate (FG) ionizing radiation sensor, were used to investigate its degradation under Gamma radiation. Original MOS transistors with bulks made of crystalline silicon and Poly allowed minimizing the number of irradiations required to study the peculiarities of charge accumulation in the dielectrics of C-sensors. Electrical characterization of the developed structures before and after the exposure to different doses of Gamma radiation was performed. The guidelines for improving sensor immunity to radiation degradation are discussed.

Original language	English
Pages (from-to)	18-25
Number of pages	8
Journal	Microelectronics Reliability
Volume	59
DOIs	https://doi.org/10.1016/j.microrel.2015.12.032
State	Published - 1 Apr 2016

Keywords

Floating gate
Gamma-ray detection
Ionizing radiation sensors
Radiation detectors
Semiconductor radiation detectors
Silicon radiation detectors
X-ray detection

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Safety, Risk, Reliability and Quality
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.microrel.2015.12.032

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title = "Degradation study of single poly radiation sensors by monitoring charge trapping",

abstract = "Special test structures emulating the performance of C-sensor, a direct floating gate (FG) ionizing radiation sensor, were used to investigate its degradation under Gamma radiation. Original MOS transistors with bulks made of crystalline silicon and Poly allowed minimizing the number of irradiations required to study the peculiarities of charge accumulation in the dielectrics of C-sensors. Electrical characterization of the developed structures before and after the exposure to different doses of Gamma radiation was performed. The guidelines for improving sensor immunity to radiation degradation are discussed.",

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author = "Evgeny Pikhay and Yakov Roizin and Yael Nemirovsky",

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N2 - Special test structures emulating the performance of C-sensor, a direct floating gate (FG) ionizing radiation sensor, were used to investigate its degradation under Gamma radiation. Original MOS transistors with bulks made of crystalline silicon and Poly allowed minimizing the number of irradiations required to study the peculiarities of charge accumulation in the dielectrics of C-sensors. Electrical characterization of the developed structures before and after the exposure to different doses of Gamma radiation was performed. The guidelines for improving sensor immunity to radiation degradation are discussed.

AB - Special test structures emulating the performance of C-sensor, a direct floating gate (FG) ionizing radiation sensor, were used to investigate its degradation under Gamma radiation. Original MOS transistors with bulks made of crystalline silicon and Poly allowed minimizing the number of irradiations required to study the peculiarities of charge accumulation in the dielectrics of C-sensors. Electrical characterization of the developed structures before and after the exposure to different doses of Gamma radiation was performed. The guidelines for improving sensor immunity to radiation degradation are discussed.

KW - Floating gate

KW - Gamma-ray detection

KW - Ionizing radiation sensors

KW - Radiation detectors

KW - Semiconductor radiation detectors

KW - Silicon radiation detectors

KW - X-ray detection

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JO - Microelectronics Reliability

JF - Microelectronics Reliability

ER -

Degradation study of single poly radiation sensors by monitoring charge trapping

Abstract

Keywords

ASJC Scopus subject areas

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