Dielectric and pyroelectric properties of ordered CdZnTe layers grown by MOCVD

A. Chack, K. Cohen, S. Stolyarova, Y. Nemirovsky, R. Beserman, R. Weil

Research output: Contribution to journalConference articlepeer-review

Abstract

Cd1-xZnxTe (0.1 ≤ x ≤ 0.86) layers were epitaxially deposited on (1 0 0) CdTe and on Cd0.96Zn0.04Te substrates by MOCVD, and some of their electrical and optical properties were investigated. The dielectric constant as a function of temperature was found to have a peak at a Curie temperature. At this same temperature the slope of the resistivity showed a sharp change. It was found that the layers were pyroelectric. The pyroelectric coefficient varied from 2.3 × 10-11 to 5.1 × 10-10 C K-1 m-2, depending on Zn content (x) and growth conditions. It was observed that the Curie temperature shifts in the direction of higher temperatures when the Zn content of the layers increases. The observed results are consistent with the results obtained on CdZnTe monocrystals. A correlation was observed between the pyroelectric properties of CdZnTe and valence band splitting effect, measured by the photoluminescence method at 77 K.

Original languageEnglish
Pages (from-to)1179-1183
Number of pages5
JournalJournal of Crystal Growth
Volume198-199
Issue numberpt 2
DOIs
StatePublished - Mar 1999
EventProceedings of the 1998 10th International Conference on Vapor Growth and Epitaxy and Specialist Workshops on Crystal Growth, ICVGE-10 - Jerusalem, Isr
Duration: 26 Jul 199831 Jul 1998

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Fingerprint

Dive into the research topics of 'Dielectric and pyroelectric properties of ordered CdZnTe layers grown by MOCVD'. Together they form a unique fingerprint.

Cite this