TY - JOUR
T1 - Direct measurement of nanowire Schottky junction depletion region
AU - Koren, E.
AU - Berkovitch, N.
AU - Azriel, O.
AU - Boag, A.
AU - Rosenwaks, Y.
AU - Hemesath, E. R.
AU - Lauhon, L. J.
N1 - Funding Information:
This research was generously supported by Grant No. 2008140 from the United States-Israel Binational Science Foundation [BSF] and the National Science Foundation Grant DMR-1006069.
PY - 2011/11/28
Y1 - 2011/11/28
N2 - We have used Kelvin probe force microscopy to measure the surface potential of both doped and unintentionally doped (UID) Si nanowires Schottky junctions. The imaging of the Schottky junction together with 3D potential simulation and consideration of the convolution of the scanning tip enables us to determine the real surface potential. Highly doped n-type nanowires show smaller depletion regions compared to UID nanowires, and their potential profile was successfully modeled. For the UID nanowires, the measured potential profiles and, consequently, the depletion region indicate the presence of bulk deep traps with a concentration of ∼5 1017cm-3.
AB - We have used Kelvin probe force microscopy to measure the surface potential of both doped and unintentionally doped (UID) Si nanowires Schottky junctions. The imaging of the Schottky junction together with 3D potential simulation and consideration of the convolution of the scanning tip enables us to determine the real surface potential. Highly doped n-type nanowires show smaller depletion regions compared to UID nanowires, and their potential profile was successfully modeled. For the UID nanowires, the measured potential profiles and, consequently, the depletion region indicate the presence of bulk deep traps with a concentration of ∼5 1017cm-3.
UR - http://www.scopus.com/inward/record.url?scp=82955240978&partnerID=8YFLogxK
U2 - 10.1063/1.3665182
DO - 10.1063/1.3665182
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AN - SCOPUS:82955240978
SN - 0003-6951
VL - 99
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 22
M1 - 223511
ER -