Exploring Charge Trapping Dynamics in Si:HfO-FeFETs by Temperature-Dependent Electrical Characterization

Mor Mordechai Dahan; Emanuel Ber; Or Levit; Halid Mulaosmanovic; Stefan Dunkel; Johannes Muller; Sven Beyer; Eilam Yalon

doi:10.1109/EDTM58488.2024.10512141

Exploring Charge Trapping Dynamics in Si:HfO-FeFETs by Temperature-Dependent Electrical Characterization

Mor Mordechai Dahan, Emanuel Ber, Or Levit, Halid Mulaosmanovic, Stefan Dunkel, Johannes Muller, Sven Beyer, Eilam Yalon

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Ferroelectric HfO₂ technology shows promise for non-volatile memory and neuromorphic devices. However, charge trapping limits their performance. This work presents temperature-dependent electrical characterization that reveals distinct memory window behaviors, transitioning from ferroelectric to trapping. Our measurements span six orders of magnitude in time, and ambient temperatures of 80-300 K. Analysis of threshold voltage, memory window, and de-trapping dynamics extracts a trap energy level of 0.2 eV, providing crucial insights for advancing FE HfO₂-based FeFETs technology.

Original language	English
Title of host publication	IEEE Electron Devices Technology and Manufacturing Conference
Subtitle of host publication	Strengthening the Globalization in Semiconductors, EDTM 2024
ISBN (Electronic)	9798350371529
DOIs	https://doi.org/10.1109/EDTM58488.2024.10512141
State	Published - 2024
Event	8th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2024 - Bangalore, India Duration: 3 Mar 2024 → 6 Mar 2024

Publication series

Name	IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024

Conference

Conference	8th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2024
Country/Territory	India
City	Bangalore
Period	3/03/24 → 6/03/24

Keywords

charge trapping
cryogenic measurements
FeFET
read-after-write delay
Si:HfO
trap energy level

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Energy Engineering and Power Technology
Electrical and Electronic Engineering
Instrumentation

Access to Document

10.1109/EDTM58488.2024.10512141

Cite this

Dahan, M. M., Ber, E., Levit, O., Mulaosmanovic, H., Dunkel, S., Muller, J., Beyer, S., & Yalon, E. (2024). Exploring Charge Trapping Dynamics in Si:HfO-FeFETs by Temperature-Dependent Electrical Characterization. In IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024 (IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024). https://doi.org/10.1109/EDTM58488.2024.10512141

Dahan, Mor Mordechai ; Ber, Emanuel ; Levit, Or et al. / Exploring Charge Trapping Dynamics in Si:HfO-FeFETs by Temperature-Dependent Electrical Characterization. IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024. 2024. (IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024).

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title = "Exploring Charge Trapping Dynamics in Si:HfO-FeFETs by Temperature-Dependent Electrical Characterization",

abstract = "Ferroelectric HfO2 technology shows promise for non-volatile memory and neuromorphic devices. However, charge trapping limits their performance. This work presents temperature-dependent electrical characterization that reveals distinct memory window behaviors, transitioning from ferroelectric to trapping. Our measurements span six orders of magnitude in time, and ambient temperatures of 80-300 K. Analysis of threshold voltage, memory window, and de-trapping dynamics extracts a trap energy level of 0.2 eV, providing crucial insights for advancing FE HfO2-based FeFETs technology.",

keywords = "charge trapping, cryogenic measurements, FeFET, read-after-write delay, Si:HfO, trap energy level",

author = "Dahan, {Mor Mordechai} and Emanuel Ber and Or Levit and Halid Mulaosmanovic and Stefan Dunkel and Johannes Muller and Sven Beyer and Eilam Yalon",

note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 8th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2024 ; Conference date: 03-03-2024 Through 06-03-2024",

year = "2024",

doi = "10.1109/EDTM58488.2024.10512141",

language = "אנגלית",

series = "IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024",

booktitle = "IEEE Electron Devices Technology and Manufacturing Conference",

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Dahan, MM, Ber, E, Levit, O, Mulaosmanovic, H, Dunkel, S, Muller, J, Beyer, S & Yalon, E 2024, Exploring Charge Trapping Dynamics in Si:HfO-FeFETs by Temperature-Dependent Electrical Characterization. in IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024. IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024, 8th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2024, Bangalore, India, 3/03/24. https://doi.org/10.1109/EDTM58488.2024.10512141

Exploring Charge Trapping Dynamics in Si:HfO-FeFETs by Temperature-Dependent Electrical Characterization. / Dahan, Mor Mordechai; Ber, Emanuel; Levit, Or et al.
IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024. 2024. (IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Exploring Charge Trapping Dynamics in Si:HfO-FeFETs by Temperature-Dependent Electrical Characterization

AU - Dahan, Mor Mordechai

AU - Ber, Emanuel

AU - Levit, Or

AU - Mulaosmanovic, Halid

AU - Dunkel, Stefan

AU - Muller, Johannes

AU - Beyer, Sven

AU - Yalon, Eilam

PY - 2024

Y1 - 2024

N2 - Ferroelectric HfO2 technology shows promise for non-volatile memory and neuromorphic devices. However, charge trapping limits their performance. This work presents temperature-dependent electrical characterization that reveals distinct memory window behaviors, transitioning from ferroelectric to trapping. Our measurements span six orders of magnitude in time, and ambient temperatures of 80-300 K. Analysis of threshold voltage, memory window, and de-trapping dynamics extracts a trap energy level of 0.2 eV, providing crucial insights for advancing FE HfO2-based FeFETs technology.

AB - Ferroelectric HfO2 technology shows promise for non-volatile memory and neuromorphic devices. However, charge trapping limits their performance. This work presents temperature-dependent electrical characterization that reveals distinct memory window behaviors, transitioning from ferroelectric to trapping. Our measurements span six orders of magnitude in time, and ambient temperatures of 80-300 K. Analysis of threshold voltage, memory window, and de-trapping dynamics extracts a trap energy level of 0.2 eV, providing crucial insights for advancing FE HfO2-based FeFETs technology.

KW - charge trapping

KW - cryogenic measurements

KW - FeFET

KW - read-after-write delay

KW - Si:HfO

KW - trap energy level

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Y2 - 3 March 2024 through 6 March 2024

ER -

Dahan MM, Ber E, Levit O, Mulaosmanovic H, Dunkel S, Muller J et al. Exploring Charge Trapping Dynamics in Si:HfO-FeFETs by Temperature-Dependent Electrical Characterization. In IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024. 2024. (IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024). doi: 10.1109/EDTM58488.2024.10512141

Exploring Charge Trapping Dynamics in Si:HfO-FeFETs by Temperature-Dependent Electrical Characterization

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Keywords

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