High-Speed Electrical Transient Thermometry of Monolayer MoS2

Emanuel Ber, Eilam Yalon

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Self-heating greatly limits performance of devices based on two-dimensional (2D) materials. Here, we present a novel high-speed thermometry method for 2D semiconductor devices. Utilizing nanosecond pulsed measurements, at timescales shorter than the device thermal time constant, we probe transient self-heating in monolayer MoS2 transistors. We measure temperature-dependent thermal resistance of 2D semiconductor devices, extracting the thermal boundary conductance of monolayer MoS2 in a wide temperature range. Our results offer insights into 2D materials thermal interfaces.

Original languageEnglish
Title of host publicationIEEE Electron Devices Technology and Manufacturing Conference
Subtitle of host publicationStrengthening the Globalization in Semiconductors, EDTM 2024
ISBN (Electronic)9798350371529
DOIs
StatePublished - 2024
Event8th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2024 - Bangalore, India
Duration: 3 Mar 20246 Mar 2024

Publication series

NameIEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024

Conference

Conference8th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2024
Country/TerritoryIndia
CityBangalore
Period3/03/246/03/24

Keywords

  • High-Speed Pulsed Measurements
  • Power Dissipation
  • Transient Electrical Thermometry

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering
  • Instrumentation

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