TY - GEN
T1 - Hybrid approach for RF MEMS devices
AU - Aharon, O.
AU - Gal, L.
AU - Nemirovsky, Y.
PY - 2008
Y1 - 2008
N2 - This work presents the RF design considerations of electro-mechanical MEMS structures realized by the hybrid approach. Modeling of the MEMS devices capacitance in up state is different than for surface micromachined devices, due to significant fringing fields. RF MEMS demonstrators as switch and inductor have been modeled, simulated and RF characterized. The fabrication of the hybrid devices has been performed using bulk micromachining of an SOI wafer, followed by a vertical integration with a GaAs and InP circuit substrates.
AB - This work presents the RF design considerations of electro-mechanical MEMS structures realized by the hybrid approach. Modeling of the MEMS devices capacitance in up state is different than for surface micromachined devices, due to significant fringing fields. RF MEMS demonstrators as switch and inductor have been modeled, simulated and RF characterized. The fabrication of the hybrid devices has been performed using bulk micromachining of an SOI wafer, followed by a vertical integration with a GaAs and InP circuit substrates.
UR - http://www.scopus.com/inward/record.url?scp=51849111087&partnerID=8YFLogxK
U2 - 10.1109/COMCAS.2008.4562834
DO - 10.1109/COMCAS.2008.4562834
M3 - ???researchoutput.researchoutputtypes.contributiontobookanthology.conference???
AN - SCOPUS:51849111087
SN - 1424420970
SN - 9781424420971
T3 - 2008 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2008
BT - 2008 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2008
T2 - 2008 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2008
Y2 - 13 May 2008 through 14 May 2008
ER -
