I-V curves of Y-Ba-Cu-O microbridges in the flux flow regime

B. Kalisky; Y. Wolfus; Y. Yeshurun; G. Koren; R. P. Huebener

doi:10.1016/j.physc.2003.09.053

I-V curves of Y-Ba-Cu-O microbridges in the flux flow regime

B. Kalisky, Y. Wolfus, Y. Yeshurun, G. Koren, R. P. Huebener

Research output: Contribution to journal › Conference article › peer-review

Abstract

We report on measurements of I-V curves in microbridges of thin Y-Ba-Cu-O films of different thickness, in the presence of external magnetic fields up to 6 T. A discontinuity is observed at a critical voltage, V*, in the flux flow regime, reflecting an electronic instability, as predicted by Larkin and Ovchinnikov (LO), and in agreement with results reported by Doettinger et al. [Phys. Rev. Let. 73 (1994) 1691]. The critical voltage, V*, and the flux flow resistance, R₀, in the limit V→0, are calculated by fitting the data to the LO model. We find that the vortex critical velocity, v*, at the instability, derived from V*, decreases with magnetic field and film thickness. These results, not predicted by the LO theory, reflect the dependence of the (spatially averaged) quasiparticle energy relaxation rate on magnetic field and film thickness.

Original language	English
Pages (from-to)	273-276
Number of pages	4
Journal	Physica C: Superconductivity and its Applications
Volume	401
Issue number	1-4
DOIs	https://doi.org/10.1016/j.physc.2003.09.053
State	Published - 15 Jan 2004
Event	Proceedings of the International Cryogenic Materials Conference - Enschede, Netherlands Duration: 25 May 2003 → 28 May 2003

Keywords

Electronic instability
I-V curve
Y-Ba-Cu-O

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Energy Engineering and Power Technology
Electrical and Electronic Engineering

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title = "I-V curves of Y-Ba-Cu-O microbridges in the flux flow regime",

abstract = "We report on measurements of I-V curves in microbridges of thin Y-Ba-Cu-O films of different thickness, in the presence of external magnetic fields up to 6 T. A discontinuity is observed at a critical voltage, V*, in the flux flow regime, reflecting an electronic instability, as predicted by Larkin and Ovchinnikov (LO), and in agreement with results reported by Doettinger et al. [Phys. Rev. Let. 73 (1994) 1691]. The critical voltage, V*, and the flux flow resistance, R0, in the limit V→0, are calculated by fitting the data to the LO model. We find that the vortex critical velocity, v*, at the instability, derived from V*, decreases with magnetic field and film thickness. These results, not predicted by the LO theory, reflect the dependence of the (spatially averaged) quasiparticle energy relaxation rate on magnetic field and film thickness.",

keywords = "Electronic instability, I-V curve, Y-Ba-Cu-O",

author = "B. Kalisky and Y. Wolfus and Y. Yeshurun and G. Koren and Huebener, {R. P.}",

note = "Funding Information: This research was supported in part by the German–Israel Foundation (GIF), the Heinrich Hertz Minerva Center for High Temperature Superconductivity, and the Israel Science Foundation (ISF), center of excellence program.; Proceedings of the International Cryogenic Materials Conference ; Conference date: 25-05-2003 Through 28-05-2003",

year = "2004",

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day = "15",

doi = "10.1016/j.physc.2003.09.053",

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T1 - I-V curves of Y-Ba-Cu-O microbridges in the flux flow regime

AU - Kalisky, B.

AU - Wolfus, Y.

AU - Yeshurun, Y.

AU - Koren, G.

AU - Huebener, R. P.

N1 - Funding Information: This research was supported in part by the German–Israel Foundation (GIF), the Heinrich Hertz Minerva Center for High Temperature Superconductivity, and the Israel Science Foundation (ISF), center of excellence program.

PY - 2004/1/15

Y1 - 2004/1/15

N2 - We report on measurements of I-V curves in microbridges of thin Y-Ba-Cu-O films of different thickness, in the presence of external magnetic fields up to 6 T. A discontinuity is observed at a critical voltage, V*, in the flux flow regime, reflecting an electronic instability, as predicted by Larkin and Ovchinnikov (LO), and in agreement with results reported by Doettinger et al. [Phys. Rev. Let. 73 (1994) 1691]. The critical voltage, V*, and the flux flow resistance, R0, in the limit V→0, are calculated by fitting the data to the LO model. We find that the vortex critical velocity, v*, at the instability, derived from V*, decreases with magnetic field and film thickness. These results, not predicted by the LO theory, reflect the dependence of the (spatially averaged) quasiparticle energy relaxation rate on magnetic field and film thickness.

AB - We report on measurements of I-V curves in microbridges of thin Y-Ba-Cu-O films of different thickness, in the presence of external magnetic fields up to 6 T. A discontinuity is observed at a critical voltage, V*, in the flux flow regime, reflecting an electronic instability, as predicted by Larkin and Ovchinnikov (LO), and in agreement with results reported by Doettinger et al. [Phys. Rev. Let. 73 (1994) 1691]. The critical voltage, V*, and the flux flow resistance, R0, in the limit V→0, are calculated by fitting the data to the LO model. We find that the vortex critical velocity, v*, at the instability, derived from V*, decreases with magnetic field and film thickness. These results, not predicted by the LO theory, reflect the dependence of the (spatially averaged) quasiparticle energy relaxation rate on magnetic field and film thickness.

KW - Electronic instability

KW - I-V curve

KW - Y-Ba-Cu-O

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SN - 0921-4534

VL - 401

SP - 273

EP - 276

JO - Physica C: Superconductivity and its Applications

JF - Physica C: Superconductivity and its Applications

IS - 1-4

T2 - Proceedings of the International Cryogenic Materials Conference

Y2 - 25 May 2003 through 28 May 2003

ER -

I-V curves of Y-Ba-Cu-O microbridges in the flux flow regime

Abstract

Keywords

ASJC Scopus subject areas

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