Low frequency noise in surface and buried channel nanometric CMOS transistors

Maria Malits; Igor Brouk; Yael Nemirovsky; Adi Birman; Asaf Lahav; Amos Fenigstein

doi:10.1109/EEEI.2014.7005756

Low frequency noise in surface and buried channel nanometric CMOS transistors

Maria Malits, Igor Brouk, Yael Nemirovsky, Adi Birman, Asaf Lahav, Amos Fenigstein

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this study the electrical and noise characteristics of surface and buried channel N-type MOSFETs are widely investigated and compared. Various operation modes which can exist at the surface of a buried channel devices, such as accumulation, depletion, and inversion, are demonstrated. We show that buried channel devices require careful selection of the biasing point to achieve optimal noise performance. Avoiding either inversion or accumulation at the interface is required to minimize the noise. The input-referred current noise power spectral density of the investigated buried channel transistor is shown to be a factor of 20 lower at low frequencies than in surface channel device.

Original language	English
Title of host publication	2014 IEEE 28th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014
ISBN (Electronic)	9781479959877
DOIs	https://doi.org/10.1109/EEEI.2014.7005756
State	Published - 2014
Event	2014 28th IEEE Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014 - Eilat, Israel Duration: 3 Dec 2014 → 5 Dec 2014

Publication series

Name	2014 IEEE 28th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014

Conference

Conference	2014 28th IEEE Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014
Country/Territory	Israel
City	Eilat
Period	3/12/14 → 5/12/14

Keywords

Buried channel MOSFET
Low frequency noise

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/EEEI.2014.7005756

Cite this

Malits, M., Brouk, I., Nemirovsky, Y., Birman, A., Lahav, A., & Fenigstein, A. (2014). Low frequency noise in surface and buried channel nanometric CMOS transistors. In 2014 IEEE 28th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014 Article 7005756 (2014 IEEE 28th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014). https://doi.org/10.1109/EEEI.2014.7005756

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title = "Low frequency noise in surface and buried channel nanometric CMOS transistors",

abstract = "In this study the electrical and noise characteristics of surface and buried channel N-type MOSFETs are widely investigated and compared. Various operation modes which can exist at the surface of a buried channel devices, such as accumulation, depletion, and inversion, are demonstrated. We show that buried channel devices require careful selection of the biasing point to achieve optimal noise performance. Avoiding either inversion or accumulation at the interface is required to minimize the noise. The input-referred current noise power spectral density of the investigated buried channel transistor is shown to be a factor of 20 lower at low frequencies than in surface channel device.",

keywords = "Buried channel MOSFET, Low frequency noise",

author = "Maria Malits and Igor Brouk and Yael Nemirovsky and Adi Birman and Asaf Lahav and Amos Fenigstein",

note = "Publisher Copyright: {\textcopyright} Copyright 2015 IEEE All rights reserved.; 2014 28th IEEE Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014 ; Conference date: 03-12-2014 Through 05-12-2014",

year = "2014",

doi = "10.1109/EEEI.2014.7005756",

language = "אנגלית",

series = "2014 IEEE 28th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014",

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Malits, M, Brouk, I, Nemirovsky, Y, Birman, A, Lahav, A & Fenigstein, A 2014, Low frequency noise in surface and buried channel nanometric CMOS transistors. in 2014 IEEE 28th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014., 7005756, 2014 IEEE 28th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014, 2014 28th IEEE Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014, Eilat, Israel, 3/12/14. https://doi.org/10.1109/EEEI.2014.7005756

Low frequency noise in surface and buried channel nanometric CMOS transistors. / Malits, Maria; Brouk, Igor; Nemirovsky, Yael et al.
2014 IEEE 28th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014. 2014. 7005756 (2014 IEEE 28th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Fenigstein, Amos

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AB - In this study the electrical and noise characteristics of surface and buried channel N-type MOSFETs are widely investigated and compared. Various operation modes which can exist at the surface of a buried channel devices, such as accumulation, depletion, and inversion, are demonstrated. We show that buried channel devices require careful selection of the biasing point to achieve optimal noise performance. Avoiding either inversion or accumulation at the interface is required to minimize the noise. The input-referred current noise power spectral density of the investigated buried channel transistor is shown to be a factor of 20 lower at low frequencies than in surface channel device.

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Malits M, Brouk I, Nemirovsky Y, Birman A, Lahav A, Fenigstein A. Low frequency noise in surface and buried channel nanometric CMOS transistors. In 2014 IEEE 28th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014. 2014. 7005756. (2014 IEEE 28th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014). doi: 10.1109/EEEI.2014.7005756

Low frequency noise in surface and buried channel nanometric CMOS transistors

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