Micro-machined CMOS-SOI transistor (TMOS) thermal sensor operating in air

A. Zviagintsev, T. Blank, I. Brouk, S. Bar-Lev, S. Stolyarova, A. Svetlitza, I. Bloom, A. Nemirovsky, Y. Nemirovsky

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper presents the performance of CMOS-SOI TMOS thermal sensor processed in a well-established 1μm technology, operating in air. The TMOS is a micro-machined CMOS transistor, operating at subthreshold. The thermally isolated floating MOS transistor senses temperature changes induced by either a physical or a chemical phenomenon. The change in temperature modifies the threshold voltage and accordingly the I-V characteristics of the micro-machined transistor. Operation in air, without vacuum packaging, enables low-cost products for a wide range of low-cost commercial mobile applications such as IoT, wearables, smart homes and smartphones.

Original languageEnglish
Title of host publication2017 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems, COMCAS 2017
Pages1-4
Number of pages4
ISBN (Electronic)9781538631690
DOIs
StatePublished - 28 Jun 2017
Event2017 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems, COMCAS 2017 - Tel-Aviv, Israel
Duration: 13 Nov 201715 Nov 2017

Publication series

Name2017 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems, COMCAS 2017
Volume2017-November

Conference

Conference2017 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems, COMCAS 2017
Country/TerritoryIsrael
CityTel-Aviv
Period13/11/1715/11/17

Keywords

  • CMOS-SOI-NEMS technology
  • IoT applications
  • MEMS
  • TMOS imager
  • Uncooled IR sensing
  • in-air operation

ASJC Scopus subject areas

  • Radiation
  • Computer Networks and Communications
  • Electrical and Electronic Engineering

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