TY - JOUR
T1 - MOCVD growth of ordered Cd(1-x)ZnxTe epilayers
AU - Cohen, K.
AU - Stolyarova, S.
AU - Amir, N.
AU - Chack, A.
AU - Beserman, R.
AU - Weil, R.
AU - Nemirovsky, Y.
N1 - Funding Information:
We acknowledge Dr. W.D. Kaplan for useful discussions, Dr. A. Berner for TEM experiments, A. Shai and Y. Leibovitz for technical support. This work was supported in part by a grant from the Israeli Science Foundation, the Ministry of Immigrant Absorption and the Gilady Program.
PY - 1999/3
Y1 - 1999/3
N2 - This work reports for the first time the preparation of ordered Cd(1-x)ZnxTe epilayers. The epilayers were deposited on CdTe (1 0 0) substrates by metal organic chemical vapor deposition in a horizontal quartz reactor. Diethylzinc, dimethylcadmium and diethyltelluride were used as metalorganic precursors with hydrogen as a carrier gas. Influence of different growth parameters on the growth process is studied for the deposited Cd(1-x)ZnxTe layers. Transmission electron microscopy diffraction was performed and the long-range ordering effect was observed for the first time, in these layers. The appearance of extra spots attributed to (h ± 1/2 , k ∓ 1/2 , l ± 1/2 ) planes is the indication of CuPt-type atomic ordering in the CdZnTe epilayers.
AB - This work reports for the first time the preparation of ordered Cd(1-x)ZnxTe epilayers. The epilayers were deposited on CdTe (1 0 0) substrates by metal organic chemical vapor deposition in a horizontal quartz reactor. Diethylzinc, dimethylcadmium and diethyltelluride were used as metalorganic precursors with hydrogen as a carrier gas. Influence of different growth parameters on the growth process is studied for the deposited Cd(1-x)ZnxTe layers. Transmission electron microscopy diffraction was performed and the long-range ordering effect was observed for the first time, in these layers. The appearance of extra spots attributed to (h ± 1/2 , k ∓ 1/2 , l ± 1/2 ) planes is the indication of CuPt-type atomic ordering in the CdZnTe epilayers.
UR - http://www.scopus.com/inward/record.url?scp=0033514552&partnerID=8YFLogxK
U2 - 10.1016/S0022-0248(98)01203-2
DO - 10.1016/S0022-0248(98)01203-2
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AN - SCOPUS:0033514552
SN - 0022-0248
VL - 198-199
SP - 1174
EP - 1178
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - pt 2
T2 - Proceedings of the 1998 10th International Conference on Vapor Growth and Epitaxy and Specialist Workshops on Crystal Growth, ICVGE-10
Y2 - 26 July 1998 through 31 July 1998
ER -