Modeling the Performance of Mosaic Uncooled Passive IR Sensors in CMOS-SOI Technology

Alex Zviagintsev; Sharon Bar-Lev; Igor Brouk; Ilan Bloom; Yael Nemirovsky

doi:10.1109/TED.2018.2863207

Modeling the Performance of Mosaic Uncooled Passive IR Sensors in CMOS-SOI Technology

Alex Zviagintsev, Sharon Bar-Lev, Igor Brouk, Ilan Bloom, Yael Nemirovsky

Research output: Contribution to journal › Article › peer-review

Abstract

This paper analyzes the performance of mosaic nonimaging passive infrared (PIR) sensors fabricated by the CMOS-SOI-MEMS technology. The elementary sensor, forming a subpixel, is a thermally isolated nanomachined CMOS transistor, dubbed TMOS, operating at subthreshold. The mosaic uncooled PIR sensors are composed of several TMOS subpixels, which are electrically connected, either in parallel or in series as well as a combination of both options. These mosaic sensors, which are manufactured by nanofabrication methods, exhibit enhanced performance and robust manufacturing on wafer level. The overall figures of merit of these sensors, which are modeled in this paper, indicate why they are most suitable for consumer electronics, including smart homes, wearables, Internet of Things as well as mobile applications.

Original language	English
Article number	8463631
Pages (from-to)	4571-4576
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	65
Issue number	10
DOIs	https://doi.org/10.1109/TED.2018.2863207
State	Published - Oct 2018

Keywords

CMOS-SOI-NEMS
MOS transistors
mosaic
passive infrared (PIR) sensors
uncooled infrared (IR) sensors
voltage-current response

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/TED.2018.2863207

Cite this

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abstract = "This paper analyzes the performance of mosaic nonimaging passive infrared (PIR) sensors fabricated by the CMOS-SOI-MEMS technology. The elementary sensor, forming a subpixel, is a thermally isolated nanomachined CMOS transistor, dubbed TMOS, operating at subthreshold. The mosaic uncooled PIR sensors are composed of several TMOS subpixels, which are electrically connected, either in parallel or in series as well as a combination of both options. These mosaic sensors, which are manufactured by nanofabrication methods, exhibit enhanced performance and robust manufacturing on wafer level. The overall figures of merit of these sensors, which are modeled in this paper, indicate why they are most suitable for consumer electronics, including smart homes, wearables, Internet of Things as well as mobile applications.",

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Modeling the Performance of Mosaic Uncooled Passive IR Sensors in CMOS-SOI Technology

Abstract

Keywords

ASJC Scopus subject areas

UN SDGs

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