TY - JOUR
T1 - Monolithic In2Se3–In2O3 heterojunction for multibit non-volatile memory and logic operations using optoelectronic inputs
AU - Mukherjee, Subhrajit
AU - Dutta, Debopriya
AU - Uzhansky, Michael
AU - Koren, Elad
N1 - Publisher Copyright:
© 2022, The Author(s).
PY - 2022/12
Y1 - 2022/12
N2 - Stable ferroelectricity at room-temperature down to the monolayer limit, harnessed with strong sensitivity towards visible-to-near-infrared illumination in α-In2Se3, facilitates its potential as versatile building block for developing ultrathin multifunctional photonic integrated networks. Herein, we demonstrated a planar ferroelectric-semiconductor heterojunction (FeS-HJ) field-effect transistor (FET) fabricated out of α-In2Se3 and In2O3, where the ferroelectric-polarization state in α-In2Se3 is utilized to control the device characteristics. The robust in-plane (IP) polarization flipping triggered by out-of-plane (OOP) electrostatic field along with clear anticlockwise hysteresis loop were readily revealed by scanning Kelvin-probe force microscopy (KPFM) and electrical probing. The orthogonally tangled ferroelectric switching was used to manipulate the HJ channel conductance and thereby to realize non-volatile memory (NVM) states. Moreover, gate-tuneable diode-like characteristics and superior photoresponse in HJ compared to its individual constitutes were observed. Utilizing the concurrent ferro-photonic coupling, high bandwidth optical inputs further tailored the outputs into four distinguished current states induced by different polarization directions. Our results pave the way for developing advanced (opto) electronic devices with diverse signal modulation capability to realize next generation low-power neurocomputing, brain-inspired visionary systems, and on-chip optical communications.
AB - Stable ferroelectricity at room-temperature down to the monolayer limit, harnessed with strong sensitivity towards visible-to-near-infrared illumination in α-In2Se3, facilitates its potential as versatile building block for developing ultrathin multifunctional photonic integrated networks. Herein, we demonstrated a planar ferroelectric-semiconductor heterojunction (FeS-HJ) field-effect transistor (FET) fabricated out of α-In2Se3 and In2O3, where the ferroelectric-polarization state in α-In2Se3 is utilized to control the device characteristics. The robust in-plane (IP) polarization flipping triggered by out-of-plane (OOP) electrostatic field along with clear anticlockwise hysteresis loop were readily revealed by scanning Kelvin-probe force microscopy (KPFM) and electrical probing. The orthogonally tangled ferroelectric switching was used to manipulate the HJ channel conductance and thereby to realize non-volatile memory (NVM) states. Moreover, gate-tuneable diode-like characteristics and superior photoresponse in HJ compared to its individual constitutes were observed. Utilizing the concurrent ferro-photonic coupling, high bandwidth optical inputs further tailored the outputs into four distinguished current states induced by different polarization directions. Our results pave the way for developing advanced (opto) electronic devices with diverse signal modulation capability to realize next generation low-power neurocomputing, brain-inspired visionary systems, and on-chip optical communications.
UR - http://www.scopus.com/inward/record.url?scp=85130814669&partnerID=8YFLogxK
U2 - 10.1038/s41699-022-00309-5
DO - 10.1038/s41699-022-00309-5
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AN - SCOPUS:85130814669
VL - 6
JO - npj 2D Materials and Applications
JF - npj 2D Materials and Applications
IS - 1
M1 - 37
ER -