NF₃ induced photoluminescence enhancement and crystalline oxide growth in porous silicon

Keyphrases

• Oxide Growth 100%
• Porous Silicon 100%
• Crystalline Oxides 100%
• Photoluminescence Enhancement 100%
• Silica 75%
• Room Temperature 50%
• Aging 50%
• Porous Silicon Layer 50%
• Silicon Dioxide 50%
• Crystalline Silicon 50%
• Crystallites 25%
• Photoluminescence 25%
• Order of Magnitude 25%
• Oxides 25%
• X Ray Diffraction 25%
• Rapid Growth 25%
• Crystallization Process 25%
• Non-stoichiometric 25%
• Ambient Air 25%
• P-type 25%
• SiOx 25%
• Orthorhombic 25%
• Silicon Wafer 25%
• Photothermal 25%
• (100) Silicon 25%
• SiO2 Layer 25%
• Native Oxide 25%
• AFM Images 25%
• Heat Treatment Temperature 25%
• SEM Images 25%
• S-band 25%
• UV Photos 25%
• Catalytic Action 25%
• Room Temperature Growth 25%
• Photochemical Treatment 25%
• Tridymite 25%

Material Science

• Photoluminescence 100%
• Crystalline Material 100%
• Oxide Compound 100%
• Porous Silicon 100%
• Silicon Dioxide 33%
• Density 16%
• Scanning Electron Microscopy 16%
• X-Ray Diffraction 16%
• Crystallization 16%
• Silicon Wafer 16%
• Crystallite 16%

Engineering

• Oxide Growth 100%
• Porous Silicon 100%
• Room Temperature 50%
• Crystalline Silicon 33%
• Silicon Surface 33%
• Ray Diffraction 16%
• Chemical Treatment 16%
• Torr 16%
• Sio2 Layer 16%
• Ambient Air 16%
• Crystallite 16%
• Silicon Wafer 16%
• Silicon Dioxide (Sio2) 16%