TY - JOUR
T1 - Non-Volatile Reconfigurable p–n Junction Utilizing In-Plane Ferroelectricity in 2D WSe2/α-In2Se3 Asymmetric Heterostructures
AU - Uzhansky, Michael
AU - Mukherjee, Subhrajit
AU - Vijayan, Gautham
AU - Koren, Elad
N1 - Publisher Copyright:
© 2023 The Authors. Advanced Functional Materials published by Wiley-VCH GmbH.
PY - 2024/2/19
Y1 - 2024/2/19
N2 - It is impossible to imagine modern electronic circuitry without a p–n junction—an essential building block for transistors, rectifiers, amplifiers, photovoltaics, etc. Conventional fabrication processes (ion implantation or chemical diffusion) result in an immutable potential configuration depriving reconfigurability. In contrast, the superior electrostatic tunability, dangling bonds- and reconstruction-free interfaces are some of the key features of 2D based heterostructures, making them promising candidates for cutting-edge optoelectronic and memory applications. Herein, the intercoupled 2D ferroelectricity of (Formula presented.) is utilized to introduce micron-scale, non-volatile electrostatic doping in ambipolar WSe2, enabling reconfigurable p–n junction. The actuation mechanism is based on the strong polarization field along the edge topology of In2Se3. The fabricated device presents stable p–n to n–p switching, a superior rectification ratio of (Formula presented.), and a low leakage current of (Formula presented.) A. Furthermore, the switchable short-circuit current response is utilized to demonstrate a novel self-powered, non-volatile memory based on photovoltaic reading. The ferroelectric non-volatility coupled with the ability to control the device operation using optical and electrical signals paves the way for ultrathin energy-efficient, multi-level optoelectronic and in-memory logic devices.
AB - It is impossible to imagine modern electronic circuitry without a p–n junction—an essential building block for transistors, rectifiers, amplifiers, photovoltaics, etc. Conventional fabrication processes (ion implantation or chemical diffusion) result in an immutable potential configuration depriving reconfigurability. In contrast, the superior electrostatic tunability, dangling bonds- and reconstruction-free interfaces are some of the key features of 2D based heterostructures, making them promising candidates for cutting-edge optoelectronic and memory applications. Herein, the intercoupled 2D ferroelectricity of (Formula presented.) is utilized to introduce micron-scale, non-volatile electrostatic doping in ambipolar WSe2, enabling reconfigurable p–n junction. The actuation mechanism is based on the strong polarization field along the edge topology of In2Se3. The fabricated device presents stable p–n to n–p switching, a superior rectification ratio of (Formula presented.), and a low leakage current of (Formula presented.) A. Furthermore, the switchable short-circuit current response is utilized to demonstrate a novel self-powered, non-volatile memory based on photovoltaic reading. The ferroelectric non-volatility coupled with the ability to control the device operation using optical and electrical signals paves the way for ultrathin energy-efficient, multi-level optoelectronic and in-memory logic devices.
KW - 2D materials
KW - InSe
KW - WSe
KW - photovoltaics
KW - p–n junction
UR - http://www.scopus.com/inward/record.url?scp=85176427249&partnerID=8YFLogxK
U2 - 10.1002/adfm.202306682
DO - 10.1002/adfm.202306682
M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???
AN - SCOPUS:85176427249
SN - 1616-301X
VL - 34
JO - Advanced Functional Materials
JF - Advanced Functional Materials
IS - 8
M1 - 2306682
ER -