Non-Volatile Reconfigurable p–n Junction Utilizing In-Plane Ferroelectricity in 2D WSe₂/α-In₂Se₃ Asymmetric Heterostructures

Keyphrases

• P-n Junction 100%
• Non-volatile 100%
• Reconfigurable 100%
• In2Se3 100%
• 2D WS2 100%
• Asymmetric Heterostructure 100%
• In-plane Ferroelectricity 100%
• Short-circuit Current 50%
• Memory Application 50%
• Fabrication Methods 50%
• Device Operation 50%
• Non-volatile Memory 50%
• Ultrathin 50%
• Optical Signal 50%
• Micron-scale 50%
• WSe2 50%
• Electrical Signal 50%
• Energy Efficient 50%
• Low Leakage Current 50%
• Optoelectronic Applications 50%
• Ion Implantation 50%
• Electronic Circuit 50%
• Memory-based 50%
• Self-powered 50%
• Heterostructure 50%
• Polarization Field 50%
• Current Response 50%
• Ambipolar 50%
• Dangling Bonds 50%
• Reconfiguration 50%
• Free Interface 50%
• Chemical Diffusion 50%
• Actuation Mechanism 50%
• In-memory Logic 50%
• Non-volatility 50%
• Essential Buildings 50%
• Electrostatic Doping 50%
• Reconstruction-free 50%
• Rectification Ratio 50%
• Transistor Rectifier 50%
• 2D Ferroelectricity 50%
• Electrostatic Tunability 50%

Engineering

• Heterostructures 100%
• Photovoltaics 100%
• Pn Junction 100%
• Optoelectronics 100%
• Electrostatic Force 100%
• Energy Engineering 50%
• Nonvolatile Memory 50%
• Building Block 50%
• Amplifier 50%
• Polarization Field 50%
• Electrical Signal 50%
• Optical Signal 50%
• Promising Candidate 50%
• Reconfigurability 50%
• Ion Implantation 50%
• Self-Powered 50%
• Cutting Edge 50%
• Rectification Ratio 50%
• Actuation 50%
• Dangling Bond 50%
• Electronic Circuitry 50%

Material Science

• Heterojunction 100%
• Photovoltaics 100%
• Ferroelectricity 100%
• Electronic Circuit 50%
• Transistor 50%
• Ion Implantation 50%
• Ferroelectric Material 50%