Optimizing the Write Fidelity of MRAMs

Yongjune Kim, Yoocharn Jeon, Cyril Guyot, Yuval Cassuto

Research output: Working paperPreprint

Abstract

Magnetic random-access memory (MRAM) is a promising memory technology due to its high density, non-volatility, and high endurance. However, achieving high memory fidelity incurs significant write-energy costs, which should be reduced for large-scale deployment of MRAMs. In this paper, we formulate an optimization problem for maximizing the memory fidelity given energy constraints, and propose a biconvex optimization approach to solve it. The basic idea is to allocate non-uniform write pulses depending on the importance of each bit position. The fidelity measure we consider is minimum mean squared error (MSE), for which we propose an iterative water-filling algorithm. Although the iterative algorithm does not guarantee global optimality, we can choose a proper starting point that decreases the MSE exponentially and guarantees fast convergence. For an 8-bit accessed word, the proposed algorithm reduces the MSE by a factor of 21.
Original languageEnglish
DOIs
StatePublished - 11 Jan 2020

Keywords

  • cs.IT
  • cs.AR
  • cs.ET
  • math.IT

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