Abstract
A new survey of muonium states brings the total of binary non-magnetic oxides studied to 30, with normal muonium - the interstitially trapped atomic state - found in 15 of these. The number of shallow-donor states of the type known in ZnO now also totals 15, but there are hints of several others. Tantalizingly, the shallow-donor and deep-atomic states are found to coexist in several of the candidate high-permittivity dielectrics. Highly anisotropic states, resembling anomalous muonium in semiconductors and including examples of muonium trapped at oxygen vacancies, complete a spectrum of hyperfine parameters covering five powers of ten. Effective ionization temperatures range from 10 K for shallow to over 1000 K for deep states, with corresponding activation energies between several meV and several eV. The oxide band gap emerges as a parameter controlling the systematics of the deep-to-shallow transition for muonium and, by inference, monatomic hydrogen.
Original language | English |
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Pages (from-to) | 379-382 |
Number of pages | 4 |
Journal | Physica B: Condensed Matter |
Volume | 374-375 |
DOIs | |
State | Published - 31 Mar 2006 |
Event | Proceedings of the Tenth International Conference on Muon Spin Rotation, Relaxation and Resonance - Duration: 8 Aug 2005 → 12 Aug 2005 |
Keywords
- Hydrogen doping
- Muonium
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering