Oxide muonics: A new compendium

S. F.J. Cox, J. S. Lord, S. P. Cottrell, J. M. Gil, H. V. Alberto, J. Piroto Duarte, R. C. Vilão, D. J. Keeble, E. A. Davis, Amit Keren, R. Scheuermann, A. Stoykov, M. Charlton, D. P. Van Der Werf, J. Gavartin

Research output: Contribution to journalConference articlepeer-review

Abstract

A new survey of muonium states brings the total of binary non-magnetic oxides studied to 30, with normal muonium - the interstitially trapped atomic state - found in 15 of these. The number of shallow-donor states of the type known in ZnO now also totals 15, but there are hints of several others. Tantalizingly, the shallow-donor and deep-atomic states are found to coexist in several of the candidate high-permittivity dielectrics. Highly anisotropic states, resembling anomalous muonium in semiconductors and including examples of muonium trapped at oxygen vacancies, complete a spectrum of hyperfine parameters covering five powers of ten. Effective ionization temperatures range from 10 K for shallow to over 1000 K for deep states, with corresponding activation energies between several meV and several eV. The oxide band gap emerges as a parameter controlling the systematics of the deep-to-shallow transition for muonium and, by inference, monatomic hydrogen.

Original languageEnglish
Pages (from-to)379-382
Number of pages4
JournalPhysica B: Condensed Matter
Volume374-375
DOIs
StatePublished - 31 Mar 2006
EventProceedings of the Tenth International Conference on Muon Spin Rotation, Relaxation and Resonance -
Duration: 8 Aug 200512 Aug 2005

Keywords

  • Hydrogen doping
  • Muonium

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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