Piezoelectric III-V and II-VI Semiconductors

Fabien Massabuau; Yonatan Calahorra

doi:10.1016/B978-0-12-815732-9.00049-8

Piezoelectric III-V and II-VI Semiconductors

Fabien Massabuau, Yonatan Calahorra

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

Abstract

For the past decades, group III-V and II-VI semiconductors have been at the forefront of semiconductor advances. However, the ionic bonds and non-centrosymmetry of their crystal structure - wurtzite or zinc-blende - imply that these materials are prone to exhibit piezoelectric effects. While piezoelectricity can be desired in some semiconductor devices, it can be harmful to others. After a general overview of the structural, piezoelectric, and electronic properties of group III-V and II-VI semiconductor materials we present the effect of piezoelectricity on devices and discuss mitigation strategies in relation to piezoelectricity.

Original language	English
Title of host publication	Encyclopedia of Smart Materials
Pages	35-49
Number of pages	15
ISBN (Electronic)	9780128157336
DOIs	https://doi.org/10.1016/B978-0-12-815732-9.00049-8
State	Published - 1 Jan 2021

Keywords

Bandgap
Optoelectronics
Piezoelectricity
Piezotronics
Semiconductor
Wurtzite
Zinc-blende

ASJC Scopus subject areas

General Engineering
General Materials Science

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10.1016/B978-0-12-815732-9.00049-8

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Piezoelectric III-V and II-VI Semiconductors

Abstract

Keywords

ASJC Scopus subject areas

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