Abstract
The quantum efficiency and crosstalk of backside illuminated indium antimonide photodiodes in hybrid focal plane arrays are calculated. An improved structure with crosswise ohmic contacts at the backside of the thinned InSb substrate is described. The simulations predict a significant reduction in the crosstalk while retaining high quantum efficiency. High quality InSb PV detector arrays and test devices were fabricated. The process includes lithography on both sides, etch thinning technique and highly controlled passivation on each side for optimum performance. The measurements show good agreement with calculations and indicate that there is no degradation due to fabrication. This study demonstrates the feasability of an improved hybrid staring FPA combining backside illuminated 2D PV detectors in thinned InSb coupled to a silicon processor.
| Original language | English |
|---|---|
| Pages (from-to) | 286-297 |
| Number of pages | 12 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 1442 |
| DOIs | |
| State | Published - 1991 |
| Event | 7th Meeting in Israel on Optical Engineering - Tel-Aviv, Isr Duration: 12 Nov 1990 → 14 Nov 1990 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering