Radiation sensor based on a floating gate device

E. Pikhay; Y. Nemirovsky; Y. Roizin; V. Dayan; K. Lavrenkov; Y. Leibovich; D. Epstein

doi:10.1109/EEEI.2012.6377101

Radiation sensor based on a floating gate device

E. Pikhay, Y. Nemirovsky, Y. Roizin, V. Dayan, K. Lavrenkov, Y. Leibovich, D. Epstein

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Ionizing radiation sensor based on the nonvolatile floating gate (FG) C-Flash memory is demonstrated. The sensing is based on measuring the threshold voltage (Vt) shift of the modified C-Flash cell pre-charged by electrons or holes. The accumulated absorbed dose is calculated from the Vt shift of the memory cell after the exposure to radiation. The developed sensor is a candidate for embedding into passive RFID radiation measuring systems. It features ultra-low power operation and does not require power supply during the exposure sessions. The feasibility results for stand-alone sensors and 2kbit test arrays are presented and discussed in view of possible applications.

Original language	English
Title of host publication	2012 IEEE 27th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2012
DOIs	https://doi.org/10.1109/EEEI.2012.6377101
State	Published - 2012
Event	2012 IEEE 27th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2012 - Eilat, Israel Duration: 14 Nov 2012 → 17 Nov 2012

Publication series

Name	2012 IEEE 27th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2012

Conference

Conference	2012 IEEE 27th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2012
Country/Territory	Israel
City	Eilat
Period	14/11/12 → 17/11/12

Keywords

NVM
floating gate
radiation sensor

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/EEEI.2012.6377101

Cite this

Pikhay, E., Nemirovsky, Y., Roizin, Y., Dayan, V., Lavrenkov, K., Leibovich, Y., & Epstein, D. (2012). Radiation sensor based on a floating gate device. In 2012 IEEE 27th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2012 Article 6377101 (2012 IEEE 27th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2012). https://doi.org/10.1109/EEEI.2012.6377101

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title = "Radiation sensor based on a floating gate device",

abstract = "Ionizing radiation sensor based on the nonvolatile floating gate (FG) C-Flash memory is demonstrated. The sensing is based on measuring the threshold voltage (Vt) shift of the modified C-Flash cell pre-charged by electrons or holes. The accumulated absorbed dose is calculated from the Vt shift of the memory cell after the exposure to radiation. The developed sensor is a candidate for embedding into passive RFID radiation measuring systems. It features ultra-low power operation and does not require power supply during the exposure sessions. The feasibility results for stand-alone sensors and 2kbit test arrays are presented and discussed in view of possible applications.",

keywords = "NVM, floating gate, radiation sensor",

author = "E. Pikhay and Y. Nemirovsky and Y. Roizin and V. Dayan and K. Lavrenkov and Y. Leibovich and D. Epstein",

year = "2012",

doi = "10.1109/EEEI.2012.6377101",

language = "אנגלית",

isbn = "9781467346801",

series = "2012 IEEE 27th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2012",

booktitle = "2012 IEEE 27th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2012",

note = "2012 IEEE 27th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2012 ; Conference date: 14-11-2012 Through 17-11-2012",

}

Pikhay, E, Nemirovsky, Y, Roizin, Y, Dayan, V, Lavrenkov, K, Leibovich, Y & Epstein, D 2012, Radiation sensor based on a floating gate device. in 2012 IEEE 27th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2012., 6377101, 2012 IEEE 27th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2012, 2012 IEEE 27th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2012, Eilat, Israel, 14/11/12. https://doi.org/10.1109/EEEI.2012.6377101

Radiation sensor based on a floating gate device. / Pikhay, E.; Nemirovsky, Y.; Roizin, Y. et al.
2012 IEEE 27th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2012. 2012. 6377101 (2012 IEEE 27th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2012).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Epstein, D.

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AB - Ionizing radiation sensor based on the nonvolatile floating gate (FG) C-Flash memory is demonstrated. The sensing is based on measuring the threshold voltage (Vt) shift of the modified C-Flash cell pre-charged by electrons or holes. The accumulated absorbed dose is calculated from the Vt shift of the memory cell after the exposure to radiation. The developed sensor is a candidate for embedding into passive RFID radiation measuring systems. It features ultra-low power operation and does not require power supply during the exposure sessions. The feasibility results for stand-alone sensors and 2kbit test arrays are presented and discussed in view of possible applications.

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Radiation sensor based on a floating gate device

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Keywords

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