TY - JOUR
T1 - Rapid thermal processing of epitaxial II-VI heterostructures
AU - Stolyarova, S.
AU - Amir, N.
AU - Nemirovsky, Y.
N1 - Funding Information:
The technical assistance of A. Shay and Y. Leibowitz is highly appreciated. This research was supported by the Fund for the Promotion of Research at the Technion. The contribution of the Center for Absorption in Science, Ministry of Immigrant Absorption of Israel and of Gilady Program is gratefully acknowledged.
PY - 1999/3
Y1 - 1999/3
N2 - The rapid thermal processing combined with metalorganic chemical vapor deposition (RTP-MOCVD) has been applied to the growth of II-VI heterostructures of CdTe/CdZnTe, CdTe/HgCdTe and ZnTe/CdTe. It has been demonstrated that all steps of rapid thermal processing contribute to the growth of II-VI compounds: (i) Photothermal pretreatment of substrate surfaces improves the crystalline structure and morphology of the films. (ii) RTP-MOCVD process results in higher growth rates (up to 60 μm/h) compared to conventional MOCVD. (iii) Rapid thermal annealing (RTA) leads to further improvement of the epilayers crystalline structure.
AB - The rapid thermal processing combined with metalorganic chemical vapor deposition (RTP-MOCVD) has been applied to the growth of II-VI heterostructures of CdTe/CdZnTe, CdTe/HgCdTe and ZnTe/CdTe. It has been demonstrated that all steps of rapid thermal processing contribute to the growth of II-VI compounds: (i) Photothermal pretreatment of substrate surfaces improves the crystalline structure and morphology of the films. (ii) RTP-MOCVD process results in higher growth rates (up to 60 μm/h) compared to conventional MOCVD. (iii) Rapid thermal annealing (RTA) leads to further improvement of the epilayers crystalline structure.
UR - http://www.scopus.com/inward/record.url?scp=4243807674&partnerID=8YFLogxK
U2 - 10.1016/S0022-0248(98)01230-5
DO - 10.1016/S0022-0248(98)01230-5
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AN - SCOPUS:4243807674
SN - 0022-0248
VL - 198-199
SP - 1157
EP - 1161
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - pt 2
T2 - Proceedings of the 1998 10th International Conference on Vapor Growth and Epitaxy and Specialist Workshops on Crystal Growth, ICVGE-10
Y2 - 26 July 1998 through 31 July 1998
ER -