Rapid thermal processing of epitaxial II-VI heterostructures

S. Stolyarova; N. Amir; Y. Nemirovsky

doi:10.1016/S0022-0248(98)01230-5

Rapid thermal processing of epitaxial II-VI heterostructures

S. Stolyarova
, N. Amir
, Y. Nemirovsky

Research output: Contribution to journal › Conference article › peer-review

Abstract

The rapid thermal processing combined with metalorganic chemical vapor deposition (RTP-MOCVD) has been applied to the growth of II-VI heterostructures of CdTe/CdZnTe, CdTe/HgCdTe and ZnTe/CdTe. It has been demonstrated that all steps of rapid thermal processing contribute to the growth of II-VI compounds: (i) Photothermal pretreatment of substrate surfaces improves the crystalline structure and morphology of the films. (ii) RTP-MOCVD process results in higher growth rates (up to 60 μm/h) compared to conventional MOCVD. (iii) Rapid thermal annealing (RTA) leads to further improvement of the epilayers crystalline structure.

Original language	English
Pages (from-to)	1157-1161
Number of pages	5
Journal	Journal of Crystal Growth
Volume	198-199
Issue number	pt 2
DOIs	https://doi.org/10.1016/S0022-0248(98)01230-5
State	Published - Mar 1999
Event	Proceedings of the 1998 10th International Conference on Vapor Growth and Epitaxy and Specialist Workshops on Crystal Growth, ICVGE-10 - Jerusalem, Isr Duration: 26 Jul 1998 → 31 Jul 1998

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/S0022-0248(98)01230-5

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title = "Rapid thermal processing of epitaxial II-VI heterostructures",

abstract = "The rapid thermal processing combined with metalorganic chemical vapor deposition (RTP-MOCVD) has been applied to the growth of II-VI heterostructures of CdTe/CdZnTe, CdTe/HgCdTe and ZnTe/CdTe. It has been demonstrated that all steps of rapid thermal processing contribute to the growth of II-VI compounds: (i) Photothermal pretreatment of substrate surfaces improves the crystalline structure and morphology of the films. (ii) RTP-MOCVD process results in higher growth rates (up to 60 μm/h) compared to conventional MOCVD. (iii) Rapid thermal annealing (RTA) leads to further improvement of the epilayers crystalline structure.",

author = "S. Stolyarova and N. Amir and Y. Nemirovsky",

note = "Funding Information: The technical assistance of A. Shay and Y. Leibowitz is highly appreciated. This research was supported by the Fund for the Promotion of Research at the Technion. The contribution of the Center for Absorption in Science, Ministry of Immigrant Absorption of Israel and of Gilady Program is gratefully acknowledged.; Proceedings of the 1998 10th International Conference on Vapor Growth and Epitaxy and Specialist Workshops on Crystal Growth, ICVGE-10 ; Conference date: 26-07-1998 Through 31-07-1998",

year = "1999",

month = mar,

doi = "10.1016/S0022-0248(98)01230-5",

language = "אנגלית",

volume = "198-199",

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number = "pt 2",

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TY - JOUR

T1 - Rapid thermal processing of epitaxial II-VI heterostructures

AU - Stolyarova, S.

AU - Amir, N.

AU - Nemirovsky, Y.

N1 - Funding Information: The technical assistance of A. Shay and Y. Leibowitz is highly appreciated. This research was supported by the Fund for the Promotion of Research at the Technion. The contribution of the Center for Absorption in Science, Ministry of Immigrant Absorption of Israel and of Gilady Program is gratefully acknowledged.

PY - 1999/3

Y1 - 1999/3

N2 - The rapid thermal processing combined with metalorganic chemical vapor deposition (RTP-MOCVD) has been applied to the growth of II-VI heterostructures of CdTe/CdZnTe, CdTe/HgCdTe and ZnTe/CdTe. It has been demonstrated that all steps of rapid thermal processing contribute to the growth of II-VI compounds: (i) Photothermal pretreatment of substrate surfaces improves the crystalline structure and morphology of the films. (ii) RTP-MOCVD process results in higher growth rates (up to 60 μm/h) compared to conventional MOCVD. (iii) Rapid thermal annealing (RTA) leads to further improvement of the epilayers crystalline structure.

AB - The rapid thermal processing combined with metalorganic chemical vapor deposition (RTP-MOCVD) has been applied to the growth of II-VI heterostructures of CdTe/CdZnTe, CdTe/HgCdTe and ZnTe/CdTe. It has been demonstrated that all steps of rapid thermal processing contribute to the growth of II-VI compounds: (i) Photothermal pretreatment of substrate surfaces improves the crystalline structure and morphology of the films. (ii) RTP-MOCVD process results in higher growth rates (up to 60 μm/h) compared to conventional MOCVD. (iii) Rapid thermal annealing (RTA) leads to further improvement of the epilayers crystalline structure.

UR - https://www.scopus.com/pages/publications/4243807674

U2 - 10.1016/S0022-0248(98)01230-5

DO - 10.1016/S0022-0248(98)01230-5

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AN - SCOPUS:4243807674

SN - 0022-0248

VL - 198-199

SP - 1157

EP - 1161

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - pt 2

T2 - Proceedings of the 1998 10th International Conference on Vapor Growth and Epitaxy and Specialist Workshops on Crystal Growth, ICVGE-10

Y2 - 26 July 1998 through 31 July 1998

ER -

Rapid thermal processing of epitaxial II-VI heterostructures

Abstract

ASJC Scopus subject areas

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