Revisiting thermal effects in submicron CMOS-SOI transistors

Maria Malits; Alexander Svetlitza; Dan Corcos; Danny Elad; Yael Nemirovsky

doi:10.1109/COMCAS.2011.6105858

Revisiting thermal effects in submicron CMOS-SOI transistors

Maria Malits, Alexander Svetlitza, Dan Corcos, Danny Elad, Yael Nemirovsky

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this study we report measurements and modeling of true channel temperature of CMOS-SOI transistors. It is shown that the temperature rise is significant, above 100K, for transistors with applied power of ∼0.1 milliwatt. The CMOS-SOI transistors were designed and fabricated with a standard partially depleted CMOS SOI 0.18μm process. It is shown that the local heating of the channel carriers may result in higher temperatures than predicted by the conventional steady-state thermal analysis. Modeling based on channel's thermoelectric effects is applied to account for the observed local-heating. The results of this study have impact on circuit design and may be extended to regular CMOS submicron technology.

Original language	English
Title of host publication	2011 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2011
DOIs	https://doi.org/10.1109/COMCAS.2011.6105858
State	Published - 2011
Event	2011 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2011 - Tel Aviv, Israel Duration: 7 Nov 2011 → 9 Nov 2011

Publication series

Name	2011 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2011

Conference

Conference	2011 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2011
Country/Territory	Israel
City	Tel Aviv
Period	7/11/11 → 9/11/11

Keywords

Channel temperature
Joule heating
Peltier heating
Silicon-On-Insulator
thermal effects
threshold voltage

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/COMCAS.2011.6105858

Cite this

Malits, M., Svetlitza, A., Corcos, D., Elad, D., & Nemirovsky, Y. (2011). Revisiting thermal effects in submicron CMOS-SOI transistors. In 2011 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2011 Article 6105858 (2011 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2011). https://doi.org/10.1109/COMCAS.2011.6105858

@inproceedings{5307eda4a16a4fe8a6c4b347c1e3a27d,

title = "Revisiting thermal effects in submicron CMOS-SOI transistors",

abstract = "In this study we report measurements and modeling of true channel temperature of CMOS-SOI transistors. It is shown that the temperature rise is significant, above 100K, for transistors with applied power of ∼0.1 milliwatt. The CMOS-SOI transistors were designed and fabricated with a standard partially depleted CMOS SOI 0.18μm process. It is shown that the local heating of the channel carriers may result in higher temperatures than predicted by the conventional steady-state thermal analysis. Modeling based on channel's thermoelectric effects is applied to account for the observed local-heating. The results of this study have impact on circuit design and may be extended to regular CMOS submicron technology.",

keywords = "Channel temperature, Joule heating, Peltier heating, Silicon-On-Insulator, thermal effects, threshold voltage",

author = "Maria Malits and Alexander Svetlitza and Dan Corcos and Danny Elad and Yael Nemirovsky",

year = "2011",

doi = "10.1109/COMCAS.2011.6105858",

language = "אנגלית",

isbn = "9781457716928",

series = "2011 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2011",

booktitle = "2011 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2011",

note = "2011 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2011 ; Conference date: 07-11-2011 Through 09-11-2011",

}

Malits, M, Svetlitza, A, Corcos, D, Elad, D & Nemirovsky, Y 2011, Revisiting thermal effects in submicron CMOS-SOI transistors. in 2011 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2011., 6105858, 2011 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2011, 2011 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2011, Tel Aviv, Israel, 7/11/11. https://doi.org/10.1109/COMCAS.2011.6105858

Revisiting thermal effects in submicron CMOS-SOI transistors. / Malits, Maria; Svetlitza, Alexander; Corcos, Dan et al.
2011 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2011. 2011. 6105858 (2011 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2011).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Revisiting thermal effects in submicron CMOS-SOI transistors

AU - Malits, Maria

AU - Svetlitza, Alexander

AU - Corcos, Dan

AU - Elad, Danny

AU - Nemirovsky, Yael

PY - 2011

Y1 - 2011

N2 - In this study we report measurements and modeling of true channel temperature of CMOS-SOI transistors. It is shown that the temperature rise is significant, above 100K, for transistors with applied power of ∼0.1 milliwatt. The CMOS-SOI transistors were designed and fabricated with a standard partially depleted CMOS SOI 0.18μm process. It is shown that the local heating of the channel carriers may result in higher temperatures than predicted by the conventional steady-state thermal analysis. Modeling based on channel's thermoelectric effects is applied to account for the observed local-heating. The results of this study have impact on circuit design and may be extended to regular CMOS submicron technology.

AB - In this study we report measurements and modeling of true channel temperature of CMOS-SOI transistors. It is shown that the temperature rise is significant, above 100K, for transistors with applied power of ∼0.1 milliwatt. The CMOS-SOI transistors were designed and fabricated with a standard partially depleted CMOS SOI 0.18μm process. It is shown that the local heating of the channel carriers may result in higher temperatures than predicted by the conventional steady-state thermal analysis. Modeling based on channel's thermoelectric effects is applied to account for the observed local-heating. The results of this study have impact on circuit design and may be extended to regular CMOS submicron technology.

KW - Channel temperature

KW - Joule heating

KW - Peltier heating

KW - Silicon-On-Insulator

KW - thermal effects

KW - threshold voltage

UR - http://www.scopus.com/inward/record.url?scp=84855797022&partnerID=8YFLogxK

U2 - 10.1109/COMCAS.2011.6105858

DO - 10.1109/COMCAS.2011.6105858

M3 - ???researchoutput.researchoutputtypes.contributiontobookanthology.conference???

AN - SCOPUS:84855797022

SN - 9781457716928

T3 - 2011 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2011

BT - 2011 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2011

T2 - 2011 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2011

Y2 - 7 November 2011 through 9 November 2011

ER -

Malits M, Svetlitza A, Corcos D, Elad D, Nemirovsky Y. Revisiting thermal effects in submicron CMOS-SOI transistors. In 2011 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2011. 2011. 6105858. (2011 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2011). doi: 10.1109/COMCAS.2011.6105858

Revisiting thermal effects in submicron CMOS-SOI transistors

Abstract

Publication series

Conference

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this