Selecting single photon avalanche diode (SPAD) passive-quenching resistance: An approach

Vitali Savuskan; Michael Javitt; Gil Visokolov; Igor Brouk; Yael Nemirovsky

doi:10.1109/JSEN.2013.2253603

Selecting single photon avalanche diode (SPAD) passive-quenching resistance: An approach

Vitali Savuskan, Michael Javitt, Gil Visokolov, Igor Brouk, Yael Nemirovsky

Research output: Contribution to journal › Article › peer-review

Abstract

An approach useful for designing the passive quenching circuitry of single-photon avalanche diodes (SPADs) is presented. A method is introduced which enables a chip designer to correctly select the appropriate resistance of the passive quenching component of the chip. The range of external resistance required for adequate quenching can be determined solely from the measured dc I-V characteristics of the SPAD. The tradeoff between various allowable values of resistance is discussed.

Original language	English
Article number	6482584
Pages (from-to)	2322-2328
Number of pages	7
Journal	IEEE Sensors Journal
Volume	13
Issue number	6
DOIs	https://doi.org/10.1109/JSEN.2013.2253603
State	Published - 2013

Keywords

CMOS SPAD
passive quenching
single photon avalanche diode (SPAD)

ASJC Scopus subject areas

Instrumentation
Electrical and Electronic Engineering

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10.1109/JSEN.2013.2253603

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AU - Nemirovsky, Yael

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AB - An approach useful for designing the passive quenching circuitry of single-photon avalanche diodes (SPADs) is presented. A method is introduced which enables a chip designer to correctly select the appropriate resistance of the passive quenching component of the chip. The range of external resistance required for adequate quenching can be determined solely from the measured dc I-V characteristics of the SPAD. The tradeoff between various allowable values of resistance is discussed.

KW - CMOS SPAD

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Selecting single photon avalanche diode (SPAD) passive-quenching resistance: An approach

Abstract

Keywords

ASJC Scopus subject areas

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