Self- heating effects in CMOS-SOI-NEMS transistors for uncooled passive IR sensors

Alex Zviagintsev, Igor Brouk, Ilan Bloom, Yael Nemirovsky

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Novel uncooled thermal sensor based on a suspended transistor (TMOS) made in standard CMOS-SOI process and released by post-etching, has been developed at Technion. The transient Self-heating thermal effect analysis of TMOS sensors operated either in saturation or subthreshold is presented. This work establishes an analytical analysis of a novel approach drastically reducing the self-heating thermal effect in TMOS sensors. This is achieved by a bridge-like circuit and utilizing a sensor and a reference device with similar thermal capacitance and different thermal conductivity. The self-heating effect is significantly reduced while operating in subthreshold. Thus emphasizing the advantages of the subthreshold operation point: battery operation as well as reduced self-heating.

Original languageEnglish
Title of host publication2015 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2015
ISBN (Electronic)9781479974733
DOIs
StatePublished - 17 Dec 2015
EventIEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2015 - Tel-Aviv, Israel
Duration: 2 Nov 20154 Nov 2015

Publication series

Name2015 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2015

Conference

ConferenceIEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2015
Country/TerritoryIsrael
CityTel-Aviv
Period2/11/154/11/15

Keywords

  • Compensation
  • Infrared
  • Self-heating
  • TMOS imager
  • Thermal conductance
  • Uncooled

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Networks and Communications
  • Radiation

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