Silicon electromachining processes in aqueous solutions

M. Kovler; D. Starosvetsky; Y. Nemirovsky; J. Yahalom

Silicon electromachining processes in aqueous solutions

M. Kovler, D. Starosvetsky, Y. Nemirovsky, J. Yahalom

Research output: Contribution to journal › Conference article › peer-review

Abstract

High rate of etching of silicon was obtained by non conventional cathodic polarization in alkaline solutions. When the process was carried out at potentials more negative than -10 V it caused electropolishing of the etched surface. Shifting the potential in the cathodic direction increases the etch-rate parabolically and enhances the effect of polishing. The etch-rate increased by more than two orders of magnitude over the potential range from -10 to -40 V, and reached the value of about 250 micron/hour at 60 °C. Additionally, the etch-rate of n-Si was found to be markedly enhanced by illumination.

Original language	English
Pages (from-to)	75-80
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	546
State	Published - 1999
Event	Proceedings of the 1998 MRS Fall Meeting - Symposium AA,Materials Science of Microelectromechanical Systems (MEMS) - Boston, MA, USA Duration: 1 Dec 1998 → 2 Dec 1998

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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https://www.cambridge.org/core/journals/mrs-online-proceedings-library-archive/article/abs/silicon-electromachining-processes-in-aqueous-solutions/3D46F23C55674B4AD363E3E8B529AA7D

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title = "Silicon electromachining processes in aqueous solutions",

abstract = "High rate of etching of silicon was obtained by non conventional cathodic polarization in alkaline solutions. When the process was carried out at potentials more negative than -10 V it caused electropolishing of the etched surface. Shifting the potential in the cathodic direction increases the etch-rate parabolically and enhances the effect of polishing. The etch-rate increased by more than two orders of magnitude over the potential range from -10 to -40 V, and reached the value of about 250 micron/hour at 60 °C. Additionally, the etch-rate of n-Si was found to be markedly enhanced by illumination.",

author = "M. Kovler and D. Starosvetsky and Y. Nemirovsky and J. Yahalom",

year = "1999",

language = "אנגלית",

volume = "546",

pages = "75--80",

note = "Proceedings of the 1998 MRS Fall Meeting - Symposium AA,Materials Science of Microelectromechanical Systems (MEMS) ; Conference date: 01-12-1998 Through 02-12-1998",

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Kovler, M, Starosvetsky, D, Nemirovsky, Y & Yahalom, J 1999, 'Silicon electromachining processes in aqueous solutions', Materials Research Society Symposium - Proceedings, vol. 546, pp. 75-80. <https://www.cambridge.org/core/journals/mrs-online-proceedings-library-archive/article/abs/silicon-electromachining-processes-in-aqueous-solutions/3D46F23C55674B4AD363E3E8B529AA7D>

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T1 - Silicon electromachining processes in aqueous solutions

AU - Kovler, M.

AU - Starosvetsky, D.

AU - Nemirovsky, Y.

AU - Yahalom, J.

PY - 1999

Y1 - 1999

N2 - High rate of etching of silicon was obtained by non conventional cathodic polarization in alkaline solutions. When the process was carried out at potentials more negative than -10 V it caused electropolishing of the etched surface. Shifting the potential in the cathodic direction increases the etch-rate parabolically and enhances the effect of polishing. The etch-rate increased by more than two orders of magnitude over the potential range from -10 to -40 V, and reached the value of about 250 micron/hour at 60 °C. Additionally, the etch-rate of n-Si was found to be markedly enhanced by illumination.

AB - High rate of etching of silicon was obtained by non conventional cathodic polarization in alkaline solutions. When the process was carried out at potentials more negative than -10 V it caused electropolishing of the etched surface. Shifting the potential in the cathodic direction increases the etch-rate parabolically and enhances the effect of polishing. The etch-rate increased by more than two orders of magnitude over the potential range from -10 to -40 V, and reached the value of about 250 micron/hour at 60 °C. Additionally, the etch-rate of n-Si was found to be markedly enhanced by illumination.

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VL - 546

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JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1998 MRS Fall Meeting - Symposium AA,Materials Science of Microelectromechanical Systems (MEMS)

Y2 - 1 December 1998 through 2 December 1998

ER -

Silicon electromachining processes in aqueous solutions

Abstract

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