Single photon avalanche diode collection efficiency enhancement via peripheral well-controlled field

Vitali Savuskan, Lior Gal, David Cristea, Michael Javitt, Amos Feiningstein, Tomer Leitner, Yael Nemirovsky

Research output: Contribution to journalArticlepeer-review

Abstract

Single-photon avalanche diodes photon detection efficiency (PDE) and breakdown uniformity are studied. An approach to increase the PDE based on controlled breakdown of the peripheral region of the junction is described. Parameters influencing and controlling the peripheral region breakdown are discussed. A collection efficiency >60% is demonstrated, nearly twice that of a conventional, planar breakdown device.

Original languageEnglish
Article numberA23
Pages (from-to)1939-1945
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume62
Issue number6
DOIs
StatePublished - 1 Jun 2015

Keywords

  • Avalanche breakdown
  • CMOS single-photon avalanche diode (SPAD)
  • Image sensors
  • Photodiodes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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