TY - GEN
T1 - Temperature sensing circuits in CMOS-SOI technology
AU - Malits, Maria
AU - Brouk, Igor
AU - Nemirovsky, Yael
N1 - Publisher Copyright:
© 2017 IEEE.
PY - 2017/6/28
Y1 - 2017/6/28
N2 - This paper compares various circuits allowing on-line temperature measurement and monitoring implemented in CMOS-SOI technology. Firstly, we discuss two architectures implementing an integrated circuit that generates an accurate output current or voltage proportional to the absolute temperature, i.e. PTAT. Secondly, we propose another type of integrated circuit that uses the MOSFET threshold voltage to determine the chip local temperature, namely Vt extractor circuit. The accuracy, linearity, sensitivity and calibration problems of the different circuits are discussed and compared with each other in the temperature range of 300K-420K. It is shown that threshold voltage extractor circuits are very appropriate to determine the temperature of low power, analog and mixed-signal designs due to their accuracy, low power consumption and no need for calibration. The circuits have been fabricated using 1μm partially depleted (PD) CMOS-SOI technology, and their accuracy has been experimentally verified by comparing simulated and measured results.
AB - This paper compares various circuits allowing on-line temperature measurement and monitoring implemented in CMOS-SOI technology. Firstly, we discuss two architectures implementing an integrated circuit that generates an accurate output current or voltage proportional to the absolute temperature, i.e. PTAT. Secondly, we propose another type of integrated circuit that uses the MOSFET threshold voltage to determine the chip local temperature, namely Vt extractor circuit. The accuracy, linearity, sensitivity and calibration problems of the different circuits are discussed and compared with each other in the temperature range of 300K-420K. It is shown that threshold voltage extractor circuits are very appropriate to determine the temperature of low power, analog and mixed-signal designs due to their accuracy, low power consumption and no need for calibration. The circuits have been fabricated using 1μm partially depleted (PD) CMOS-SOI technology, and their accuracy has been experimentally verified by comparing simulated and measured results.
KW - CMOS-SOI
KW - MOSFET threshold voltage
KW - Proportional to absolute temperature (PTAT)
KW - Temperature sensors
KW - Vt extractor
UR - http://www.scopus.com/inward/record.url?scp=85045839010&partnerID=8YFLogxK
U2 - 10.1109/COMCAS.2017.8244788
DO - 10.1109/COMCAS.2017.8244788
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AN - SCOPUS:85045839010
T3 - 2017 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems, COMCAS 2017
SP - 1
EP - 5
BT - 2017 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems, COMCAS 2017
T2 - 2017 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems, COMCAS 2017
Y2 - 13 November 2017 through 15 November 2017
ER -