@inproceedings{1aedce03f15f48dc99a169c42974a459,
title = "The influence of thermoelectric effects on the self-heating of nanometer CMOS-SOI devices",
abstract = "In this study we use the measured threshold voltage as the 'thermometer' to determine the true channel temperature. The self-heating effects are measured using a careful calibration of the process temperature dependent parameters such as the threshold voltage, mobility and non-ideality factor. It is shown that the temperature rise is significant, approximately 100K above room temperature, even for transistors with relatively low applied power (∼ 0.1 mWatt). The CMOS-SOI transistors were designed and fabricated using a standard partially depleted 180 nm CMOS-SOI process. The induced self-heating may result in higher device temperature than predicted by the conventional steady-state thermal analysis. Modeling based on channel's thermoelectric effects is applied to account for the observed local-heating. The results of this study have an impact on circuit design and may be extended to regular submicron CMOS technology.",
keywords = "Channel temperature, Joule heating, Peltier heating, Silicon-On-Insulator, thermal effects, threshold voltage",
author = "Maria Malits and Alex Svetlitza and Evgeny Manzhosov and Noa Rotman and Yael Nemirovsky",
year = "2012",
doi = "10.1109/EEEI.2012.6376970",
language = "אנגלית",
isbn = "9781467346801",
series = "2012 IEEE 27th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2012",
booktitle = "2012 IEEE 27th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2012",
note = "2012 IEEE 27th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2012 ; Conference date: 14-11-2012 Through 17-11-2012",
}