TY - GEN
T1 - TMOS novel uncooled sensors - theory and practice
AU - Gitelman, Leonid
AU - Gutman, Zivit
AU - Bar-Lev, Sharon
AU - Stolyarova, Sara
AU - Nemirovsky, Yael
PY - 2008
Y1 - 2008
N2 - The novel concept of thermally isolated MOS transistor serving as IR detector (TMOS) is presented and characterized showing high thermal performance. The sensors were simulated by Spice, showing thermal current coefficient of 4%, while operating in the sub-threshold region. Further improvement of TCC can be obtained for deep sub-threshold regions. Thermal parameters were calculated and simulated with ANSYS showing great potential in IR response. Sensor structurewas fabricated at well established standard 1μm CMOS-SOI technology, ensuring increased reliability, reduced cost and small area, thanks to monolithic integration of sensors and read-out electronics. Pixel size was designed to be 50μm × 50μm with a fill factor of 60%. The detector was released using simple bulk micromachining from the front side and DRIE etching from the back-side, while buried oxide provides a natural etch-stop. The TMOS was electrical characterized before and after etching showing the same electrical parameters. The pixel thermal time constant of 10 milliseconds was measured and it is fully matched to the theoretical predictions. The NEP was calculated for integration time of 1msec showing IR performance of 0.098nW. Further improvement in NEP can be obtained by decreasing Kf,sub to 1e-24[F], resulting in NEP of 0.035nW.
AB - The novel concept of thermally isolated MOS transistor serving as IR detector (TMOS) is presented and characterized showing high thermal performance. The sensors were simulated by Spice, showing thermal current coefficient of 4%, while operating in the sub-threshold region. Further improvement of TCC can be obtained for deep sub-threshold regions. Thermal parameters were calculated and simulated with ANSYS showing great potential in IR response. Sensor structurewas fabricated at well established standard 1μm CMOS-SOI technology, ensuring increased reliability, reduced cost and small area, thanks to monolithic integration of sensors and read-out electronics. Pixel size was designed to be 50μm × 50μm with a fill factor of 60%. The detector was released using simple bulk micromachining from the front side and DRIE etching from the back-side, while buried oxide provides a natural etch-stop. The TMOS was electrical characterized before and after etching showing the same electrical parameters. The pixel thermal time constant of 10 milliseconds was measured and it is fully matched to the theoretical predictions. The NEP was calculated for integration time of 1msec showing IR performance of 0.098nW. Further improvement in NEP can be obtained by decreasing Kf,sub to 1e-24[F], resulting in NEP of 0.035nW.
UR - http://www.scopus.com/inward/record.url?scp=51849118382&partnerID=8YFLogxK
U2 - 10.1109/COMCAS.2008.4562831
DO - 10.1109/COMCAS.2008.4562831
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AN - SCOPUS:51849118382
SN - 1424420970
SN - 9781424420971
T3 - 2008 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2008
BT - 2008 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2008
T2 - 2008 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2008
Y2 - 13 May 2008 through 14 May 2008
ER -
