Vertically integrated MEMS SOI composite porous silicon-crystalline silicon cantilever-array sensors: Concept for continuous sensing of explosives and warfare agents

Sara Stolyarova, Ariel Shemesh, Oren Aharon, Omer Cohen, Lior Gal, Yoav Eichen, Yael Nemirovsky

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

Abstract

This study focuses on arrays of cantilevers made of crystalline silicon (c-Si), using SOI wafers as the starting material and using bulk micromachining. The arrays are subsequently transformed into composite porous silicon-crystalline silicon cantilevers, using a unique vapor phase process tailored for providing a thin surface layer of porous silicon on one side only. This results in asymmetric cantilever arrays, with one side providing nano-structured porous large surface, which can be further coated with polymers, thus providing additional sensing capabilities and enhanced sensing. The c-Si cantilevers are vertically integrated with a bottom silicon die with electrodes allowing electrostatic actuation. Flip Chip bonding is used for the vertical integration. The readout is provided by a sensitive Capacitance to Digital Converter. The fabrication, processing and characterization results are reported. The reported study is aimed towards achieving miniature cantilever chips with integrated readout for sensing explosives and chemical warfare agents in the field.

Original languageEnglish
Title of host publicationAdvanced Materials and Technologies for Micro/Nano-Devices, Sensors and Actuators
Pages261-274
Number of pages14
DOIs
StatePublished - 2010

Publication series

NameNATO Science for Peace and Security Series B: Physics and Biophysics
ISSN (Print)1874-6500

Keywords

  • Composite cantilever
  • Crystalline-silicon and porous silicon
  • MEMS cantilever arrays
  • Sensing chemical warfare agents
  • Sensing explosives
  • Vertically integrated cantilevers

ASJC Scopus subject areas

  • Biotechnology
  • Biophysics
  • General Physics and Astronomy
  • Electrical and Electronic Engineering

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