Vertically integrated silicon single crystalline MEMS switch

Oren Aharon, Shai Feldman, Yael Nemirovsky

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

DC to RF shunt contact Micro-Electro-Mechanical switch was fabricated. The fabrication of the MEMS device was preformed using bulk micromachining process of an SOI wafer followed by a vertical integration to a microwave circuit wafer. The pull-in voltage and natural frequency of the switch were characterized. Also, RF performances at both switch states were measured. The concept of a packaged switch described in this paper enables to offer a stand alone switch, independent of the RF circuit substrate material or technology being used.

Original languageEnglish
Title of host publicationTRANSDUCERS '05 - 13th International Conference on Solid-State Sensors and Actuators and Microsystems - Digest of Technical Papers
Pages1047-1050
Number of pages4
DOIs
StatePublished - 2005
Event13th International Conference on Solid-State Sensors and Actuators and Microsystems, TRANSDUCERS '05 - Seoul, Korea, Republic of
Duration: 5 Jun 20059 Jun 2005

Publication series

NameDigest of Technical Papers - International Conference on Solid State Sensors and Actuators and Microsystems, TRANSDUCERS '05
Volume1

Conference

Conference13th International Conference on Solid-State Sensors and Actuators and Microsystems, TRANSDUCERS '05
Country/TerritoryKorea, Republic of
CitySeoul
Period5/06/059/06/05

Keywords

  • DRIE
  • RF-MEMS
  • SOI
  • Switch

ASJC Scopus subject areas

  • General Engineering

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