Voltage and current integrated readout for uncooled passive IR sensors based on CMOS-SOI-NEMS technology

Alex Zviagintsev; Ilan Bloom; Igor Brouk; Yael Nemirovsky

doi:10.1109/EEEI.2014.7005758

Voltage and current integrated readout for uncooled passive IR sensors based on CMOS-SOI-NEMS technology

Alex Zviagintsev, Ilan Bloom, Igor Brouk, Yael Nemirovsky

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Novel uncooled thermal sensor based on a suspended transistor (TMOS) made in standard CMOS-SOI process and released by post-etching, has been developed at Technion. Monolithic ROIC design principles for TMOS IR imagers, based on current and voltage operation modes are presented. Performance analysis of imaging sensors operated either in voltage or current sensing mode, is presented. The major challenges associated with the technology: Very low ratio of signal current or voltage relative to the DC power supply voltage or current, self-heating thermal effects, mismatch and low-frequency noise are discussed.

Original language	English
Title of host publication	2014 IEEE 28th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014
ISBN (Electronic)	9781479959877
DOIs	https://doi.org/10.1109/EEEI.2014.7005758
State	Published - 2014
Event	2014 28th IEEE Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014 - Eilat, Israel Duration: 3 Dec 2014 → 5 Dec 2014

Publication series

Name	2014 IEEE 28th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014

Conference

Conference	2014 28th IEEE Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014
Country/Territory	Israel
City	Eilat
Period	3/12/14 → 5/12/14

Keywords

CMOS-SOI-NEMS technology
Current response
TMOS imager
Uncooled IR sensing
Voltage response

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/EEEI.2014.7005758

Cite this

Zviagintsev, A., Bloom, I., Brouk, I., & Nemirovsky, Y. (2014). Voltage and current integrated readout for uncooled passive IR sensors based on CMOS-SOI-NEMS technology. In 2014 IEEE 28th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014 Article 7005758 (2014 IEEE 28th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014). https://doi.org/10.1109/EEEI.2014.7005758

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title = "Voltage and current integrated readout for uncooled passive IR sensors based on CMOS-SOI-NEMS technology",

abstract = "Novel uncooled thermal sensor based on a suspended transistor (TMOS) made in standard CMOS-SOI process and released by post-etching, has been developed at Technion. Monolithic ROIC design principles for TMOS IR imagers, based on current and voltage operation modes are presented. Performance analysis of imaging sensors operated either in voltage or current sensing mode, is presented. The major challenges associated with the technology: Very low ratio of signal current or voltage relative to the DC power supply voltage or current, self-heating thermal effects, mismatch and low-frequency noise are discussed.",

keywords = "CMOS-SOI-NEMS technology, Current response, TMOS imager, Uncooled IR sensing, Voltage response",

author = "Alex Zviagintsev and Ilan Bloom and Igor Brouk and Yael Nemirovsky",

note = "Publisher Copyright: {\textcopyright} Copyright 2015 IEEE All rights reserved.; 2014 28th IEEE Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014 ; Conference date: 03-12-2014 Through 05-12-2014",

year = "2014",

doi = "10.1109/EEEI.2014.7005758",

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Zviagintsev, A, Bloom, I, Brouk, I & Nemirovsky, Y 2014, Voltage and current integrated readout for uncooled passive IR sensors based on CMOS-SOI-NEMS technology. in 2014 IEEE 28th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014., 7005758, 2014 IEEE 28th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014, 2014 28th IEEE Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014, Eilat, Israel, 3/12/14. https://doi.org/10.1109/EEEI.2014.7005758

Voltage and current integrated readout for uncooled passive IR sensors based on CMOS-SOI-NEMS technology. / Zviagintsev, Alex; Bloom, Ilan; Brouk, Igor et al.
2014 IEEE 28th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014. 2014. 7005758 (2014 IEEE 28th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - Novel uncooled thermal sensor based on a suspended transistor (TMOS) made in standard CMOS-SOI process and released by post-etching, has been developed at Technion. Monolithic ROIC design principles for TMOS IR imagers, based on current and voltage operation modes are presented. Performance analysis of imaging sensors operated either in voltage or current sensing mode, is presented. The major challenges associated with the technology: Very low ratio of signal current or voltage relative to the DC power supply voltage or current, self-heating thermal effects, mismatch and low-frequency noise are discussed.

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Zviagintsev A, Bloom I, Brouk I, Nemirovsky Y. Voltage and current integrated readout for uncooled passive IR sensors based on CMOS-SOI-NEMS technology. In 2014 IEEE 28th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014. 2014. 7005758. (2014 IEEE 28th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014). doi: 10.1109/EEEI.2014.7005758

Voltage and current integrated readout for uncooled passive IR sensors based on CMOS-SOI-NEMS technology

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Keywords

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