TY - JOUR
T1 - Hall Coefficient of Semimetals
AU - Samanta, Abhisek
AU - Arovas, Daniel P.
AU - Auerbach, Assa
N1 - Publisher Copyright:
© 2021 American Physical Society.
PY - 2021/2/19
Y1 - 2021/2/19
N2 - A recently developed formula for the Hall coefficient [A. Auerbach, Phys. Rev. Lett. 121, 066601 (2018)PRLTAO0031-900710.1103/PhysRevLett.121.066601] is applied to nodal line and Weyl semimetals (including graphene) and to spin-orbit split semiconductor bands in two and three dimensions. The calculation reduces to a ratio of two equilibrium susceptibilities, where corrections are negligible at weak disorder. Deviations from Drude's inverse carrier density are associated with band degeneracies, Fermi surface topology, and interband currents. Experiments which can measure these deviations are proposed.
AB - A recently developed formula for the Hall coefficient [A. Auerbach, Phys. Rev. Lett. 121, 066601 (2018)PRLTAO0031-900710.1103/PhysRevLett.121.066601] is applied to nodal line and Weyl semimetals (including graphene) and to spin-orbit split semiconductor bands in two and three dimensions. The calculation reduces to a ratio of two equilibrium susceptibilities, where corrections are negligible at weak disorder. Deviations from Drude's inverse carrier density are associated with band degeneracies, Fermi surface topology, and interband currents. Experiments which can measure these deviations are proposed.
UR - http://www.scopus.com/inward/record.url?scp=85102402308&partnerID=8YFLogxK
U2 - 10.1103/PhysRevLett.126.076603
DO - 10.1103/PhysRevLett.126.076603
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AN - SCOPUS:85102402308
SN - 0031-9007
VL - 126
JO - Physical Review Letters
JF - Physical Review Letters
IS - 7
M1 - 076603
ER -