TY - JOUR
T1 - Limits of the modulation response of a single-mode proton implanted VCSEL
AU - Satuby, Yinon
AU - Orenstein, Meir
N1 - Funding Information:
Manuscript received January 5, 1998. This work was supported by the Israeli Ministry of Sciences and Arts. The authors are with the Advanced Optoelectronics Research Center, Department of Electrical Engineering, Technion-Israel Institute of Technology, Haifa 32000, Israel. Publisher Item Identifier S 1041-1135(98)03836-1.
PY - 1998/6
Y1 - 1998/6
N2 - The limitations of the direct modulation bandwidth for proton implanted vertical-cavity lasers were explored. The measured damping factor of an optimized device, implies a possible bandwidth of up to 80 GHz. However, the intrinsic (parasitic free) carrier transport/capture time of ∼15 ps limits substantially the actual frequency response. The actual measured bandwidth - 14.5 GHz was limited also by the emerging of higher lasing modes. The combined effects of shape, size and implantation dose should be optimized to reach the limit of the direct modulation of these lasers.
AB - The limitations of the direct modulation bandwidth for proton implanted vertical-cavity lasers were explored. The measured damping factor of an optimized device, implies a possible bandwidth of up to 80 GHz. However, the intrinsic (parasitic free) carrier transport/capture time of ∼15 ps limits substantially the actual frequency response. The actual measured bandwidth - 14.5 GHz was limited also by the emerging of higher lasing modes. The combined effects of shape, size and implantation dose should be optimized to reach the limit of the direct modulation of these lasers.
KW - Laser modes
KW - Laser modulation
KW - Surface-emitting semiconductor lasers
UR - http://www.scopus.com/inward/record.url?scp=0032094660&partnerID=8YFLogxK
U2 - 10.1109/68.681474
DO - 10.1109/68.681474
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AN - SCOPUS:0032094660
SN - 1041-1135
VL - 10
SP - 760
EP - 762
JO - IEEE Photonics Technology Letters
JF - IEEE Photonics Technology Letters
IS - 6
ER -