TY - JOUR
T1 - Spatially resolved electroluminescence of InGaN-MQW-LEDs
AU - Schwegler, Veit
AU - Seyboth, Matthias
AU - Kirchner, Christoph
AU - Scherer, Marcus
AU - Kamp, Markus
AU - Fischer, Peter
AU - Christen, Juergen
AU - Zacharias, Margit
N1 - Funding Information:
Financial support by German Ministry of Science and Education (BMBF) and Osram Opto Semiconductors under contract No. 01 BS 802 is gratefully acknowledged by the group at Ulm University. The group at Magdeburg University acknowledges financial support by the Kultusministerium of Sachsen-Anhalt under contract No. 1432A/8386B.
PY - 2000
Y1 - 2000
N2 - Electroluminescence (EL) is the most significant measure for light-emitting diodes since it probes the most relevant properties of the fully processed device during operation. In addition to the information gained by conventional spectrally resolved EL, scanning micro-EL provides spatially resolved information. The devices under investigation are InGaN/GaN-LEDs with single peak band-band emission at about 400 nm grown by MOVPE on sapphire substrates. The μ-EL-characterization is performed as a function of injection current densities and the emission is investigated from the epitaxial layer as well as from substrate side. Spatially resolved wavelength images reveal emission peaks between 406 nm and 417 nm, corresponding either to In fluctuations of 1%-1.5% or local fluctuations of piezo electric fields. Beside the information on the emission wavelength fluctuations μ-EL is used to determine the temperature distribution in the LEDs and to investigate transparent contacts.
AB - Electroluminescence (EL) is the most significant measure for light-emitting diodes since it probes the most relevant properties of the fully processed device during operation. In addition to the information gained by conventional spectrally resolved EL, scanning micro-EL provides spatially resolved information. The devices under investigation are InGaN/GaN-LEDs with single peak band-band emission at about 400 nm grown by MOVPE on sapphire substrates. The μ-EL-characterization is performed as a function of injection current densities and the emission is investigated from the epitaxial layer as well as from substrate side. Spatially resolved wavelength images reveal emission peaks between 406 nm and 417 nm, corresponding either to In fluctuations of 1%-1.5% or local fluctuations of piezo electric fields. Beside the information on the emission wavelength fluctuations μ-EL is used to determine the temperature distribution in the LEDs and to investigate transparent contacts.
UR - http://www.scopus.com/inward/record.url?scp=0033723157&partnerID=8YFLogxK
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AN - SCOPUS:0033723157
SN - 0272-9172
VL - 595
SP - W1.6.1 - W1.6.5
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
T2 - The 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys'
Y2 - 29 November 1999 through 1 December 1999
ER -