Transverse modes and lasing characteristics of selectively grown vertical cavity semiconductor lasers

Meir Orenstein; Yinnon Satuby; U. Ben-Ami; J. P. Harbison

doi:10.1063/1.117451

Transverse modes and lasing characteristics of selectively grown vertical cavity semiconductor lasers

Meir Orenstein, Yinnon Satuby, U. Ben-Ami, J. P. Harbison

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4 Scopus citations

Abstract

Vertical-cavity surface emitting lasers (VCSELs) were grown by molecular beam epitaxy over openings in a SiN₄ mask, deposited on a GaAs wafer. We obtained ready to use lasers and laser arrays, laterally defined by the polycrystalline, highly resistive material grown over the SiN₄ laser. The performance of the lasers (e.g., 20×20 μm² by size) were similar to that of VCSELs defined by post growth processing methods. Special transverse modes characteristics and a well defined polarization were observed in square shaped lasers and it was attributed to selective growth induced anisotropy.

Original language	English
Pages (from-to)	1840-1842
Number of pages	3
Journal	Applied Physics Letters
Volume	69
Issue number	13
DOIs	https://doi.org/10.1063/1.117451
State	Published - 23 Sep 1996

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "Vertical-cavity surface emitting lasers (VCSELs) were grown by molecular beam epitaxy over openings in a SiN4 mask, deposited on a GaAs wafer. We obtained ready to use lasers and laser arrays, laterally defined by the polycrystalline, highly resistive material grown over the SiN4 laser. The performance of the lasers (e.g., 20×20 μm2 by size) were similar to that of VCSELs defined by post growth processing methods. Special transverse modes characteristics and a well defined polarization were observed in square shaped lasers and it was attributed to selective growth induced anisotropy.",

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AB - Vertical-cavity surface emitting lasers (VCSELs) were grown by molecular beam epitaxy over openings in a SiN4 mask, deposited on a GaAs wafer. We obtained ready to use lasers and laser arrays, laterally defined by the polycrystalline, highly resistive material grown over the SiN4 laser. The performance of the lasers (e.g., 20×20 μm2 by size) were similar to that of VCSELs defined by post growth processing methods. Special transverse modes characteristics and a well defined polarization were observed in square shaped lasers and it was attributed to selective growth induced anisotropy.

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Transverse modes and lasing characteristics of selectively grown vertical cavity semiconductor lasers

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